SUSS MicroTec
SB 6
Wafer size
Wafer bonding at pressures 5e-5 to 3e-3 Torr and 50*C to 550*C
Power
up to 2000 V[2]
Vacuum
5e-5 to 3e-3 Torr[1]
Performance
+/- 5 degrees[2]
What it is
How it works
The SB 6 utilizes a robust vacuum chamber that can achieve pressures from 5e-5 to 3e-3 Torr. The system provides independent upper and lower substrate heating over a temperature range of 50 °C to 550 °C, with programmable pressure control up to 20 kN of force. A wafer-stack transfer arm moves the aligned wafer pair into and out of the chamber. For aligned bonding, the SB 6 is used with the SUSS MA6 or BA6 aligner, which positions the substrates before bonding.[1][2][3][4]
During a bonding cycle, the aligned wafer stack is placed between two bond heads. The chamber is evacuated or backfilled with a controlled gas, and the desired temperature and force profiles are applied according to a stored recipe. The bond heads can be exchanged: one head is dedicated to anodic bonding (with a voltage supply up to 2000 V) and another for fusion bonding. The system supports multiple process steps within a single recipe.[2][3]
What do the numbers mean?
Power & electrical2
- Supports thermal compression and anodic bonding (up to 2000 V)[1]
Vacuum & pumping6
Wafer handling4
- Forces up to 20 kN for 6" wafers available[1]
Performance2
Control & software2
- Computer controlled with Windows environment for saving data / recipes and running multiple recipe steps[1]
Configuration & options9
Vintage & configurations
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Wafer sizeWafer bonding at pressures 5e-5 to 3e-3 Torr and 50*C to 550*C[1]
- ConfigurationSupports thermal compression and anodic bonding (up to 2000 V)[1]
- Vacuum pressure5e-5 to 3e-3 Torr[1]
- Base pressure<5x10^-5 mbar[3]
- Process pressure range (source 3)5e-5 to 3e3 mBar[2]
- Anodic bonding voltageup to 2000 V[2]
- Bonding Pressure Range5e-5 to 3e-3 Torr[1]
- Achievable Chamber Pressure< 5x10^-5 mbar[3]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What is the difference between permanent and temporary bonding in machines of this class?General reference — not yet source-verified
Permanent bonding, such as fusion or direct bonding, creates a final joint intended to last through the device lifecycle. Temporary bonding uses a removable adhesive layer to mount a device wafer to a carrier, allowing subsequent processing (e.g., thinning, via etching) before the wafer is debonded. Substrate bonders of this class can be configured for either mode by controlling the bonding adhesive, temperature, and force profile.
What types of bonding processes can this class of machine support?General reference — not yet source-verified
The class typically supports thermocompression bonding, adhesive bonding, eutectic bonding, fusion (direct) bonding, and anodic bonding. The specific processes depend on the temperature range, force capacity, vacuum capability, and alignment precision of the machine. Process recipes are user‑programmable to accommodate different materials and bond requirements.
How does alignment accuracy affect the final device performance?General reference — not yet source-verified
Alignment accuracy directly impacts electrical connectivity in stacked devices. In processes such as wafer‑to‑wafer bonding for three‑dimensional interconnects, misalignment can cause shorts, open circuits, or increased resistance. For MEMS capping, poor alignment may compromise hermetic sealing or optical access. Thus, class‑level machines emphasize high‑resolution optical alignment systems and sub‑micron stage repeatability.
What are the typical substrate materials that can be bonded?General reference — not yet source-verified
Common substrate materials include silicon, glass (borosilicate, quartz), compound semiconductors (GaAs, InP), silicon carbide, sapphire, and various dielectrics. Temporary carrier wafers may be made of silicon or specialized glasses. The class can also handle substrates with pre‑existing layers such as metal pads, dielectric coatings, or release layers.
What are the key parameters to control during a bonding process?General reference — not yet source-verified
Critical parameters include bonding temperature and ramp rate, applied force and contact pressure, chamber vacuum or gas atmosphere, surface cleanliness and activation conditions, and alignment offset. Process control ensures uniform bond interface, minimal void formation, and prevention of thermal stress or delamination. Users typically develop recipes that specify the sequence and setpoints for each of these parameters.
Not publicly documented
The following facts about the SB 6 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the SB 6 are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the SB 6 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the SB 6 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the SB 6 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the SB 6 are on record.
Answerable by: an OEM parts catalog or a service engineer
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (5)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]nanolab.ucla.edu — nanolab.ucla.edunanolab.ucla.edu
- [3]uwaterloo.ca — uwaterloo.cauwaterloo.ca
- [4]web.archive.org — suss.com (Aug 8, 2010)web.archive.org
- [5]Tool List - UCSB Nanofab Wiki — wiki.nanotech.ucsb.eduwiki.nanotech.ucsb.edu
Last updated Sep 30, 2026.
Compare with similar tools
View all →
Applied Materials model 0010-47763 is an ASSY ESC Bonded Monopolar Dual Heated unit.
The Applied Materials 0041-26723 is a bonded assembly used in semiconductor packaging and bonding applications.
The Logitech 1 WBS 1 is a wafer substrate bonder for 6-inch wafers.
