Veeco
RF 350 Ion Beam
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
The Veeco RF 350 Ion Beam is a high-precision, automated, single-substrate loadlocked production system designed for ion beam etching (IBE) and Reactive Ion Beam Etching (RIBE). The RF 350 uses a 300mm diameter, inductively coupled, filamentless RF ion source that provides highly collimated beams.[1][2][3]
What it is
How it works
General reference — not yet source-verifiedIon beam etching removes material by directing a beam of ions at a substrate surface under vacuum.
Ion beam etching is used as a physical etch process when directional removal and profile control are needed.
Where it fits in the process flow
General reference — not yet source-verifiedIon beam etch tools sit in the dry etch part of the process flow and are used after pattern definition to transfer a pattern into the underlying film.
Applications
General reference — not yet source-verifiedIon beam etching is used for patterned removal of films where directional etching is important.
What do the numbers mean?
Power & electrical3
Wafer handling3
- Substrate Loading
- single-substrate loadlocked (or configurable to cassette-to-cassette)[1]2 sources
Configuration & options6
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What materials can be etched with an ion beam etch system?General reference — not yet source-verified
Ion beam etching is compatible with a wide range of materials, including silicon, gallium arsenide, metals (aluminum, gold, copper), dielectrics (silicon dioxide, silicon nitride), magnetic films, and optical coatings. The process is primarily physical sputtering, so essentially any solid material can be etched, though the rate depends on the sputter yield of the target material.
How does ion beam etch compare to reactive ion etch in terms of anisotropy?General reference — not yet source-verified
Ion beam etching typically provides superior anisotropy because the ion direction is controlled by the extraction grid, resulting in highly directional etching with minimal lateral erosion. Reactive ion etch relies on an electric field in a plasma to direct ions, which can lead to some undercut in high-aspect-ratio features. Ion beam etch is therefore preferred when vertical sidewalls are critical.
What are the typical maintenance requirements for an ion beam source?General reference — not yet source-verified
The ion source, especially the RF discharge chamber and grid assembly, requires periodic cleaning and replacement due to sputter erosion and deposition of etch by-products. The neutralizer filament also has a finite lifetime. Regular preventive maintenance includes checking grid alignment, cleaning the chamber, and replacing aging components to maintain beam uniformity and process repeatability.
How is etch uniformity controlled in ion beam systems?General reference — not yet source-verified
Uniformity is managed by rotating the substrate during etching and by adjusting beam scanning or substrate tilt. Many systems also incorporate a Faraday array to measure the ion current density profile and correct it via grid adjustments or by varying the beam scan pattern. Chamber design and pressure control also contribute to across-wafer etch rate uniformity.
Can ion beam etching be used for blanket etching or only patterned substrates?General reference — not yet source-verified
Ion beam etching can be used for both patterned and blanket etching. For patterned substrates, the directionality of the beam preserves the mask features. For blanket etching, it is used for uniform thinning (ion milling) or surface cleaning. The process is not selective in a chemical sense, so all exposed material is removed at a rate determined by its sputter yield and the incident ion angle and energy.
Not publicly documented
The following facts about the RF 350 Ion Beam are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the RF 350 Ion Beam are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the RF 350 Ion Beam are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the RF 350 Ion Beam are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the RF 350 Ion Beam are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the RF 350 Ion Beam is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (5)Every fact above is drawn from these public sources
- [1]semistarcorp.com — semistarcorp.comsemistarcorp.com
- [2]Used Veeco RF-350 Ion Beam Etching System – Bidservice — bidservice.combidservice.com
- [3]Veeco RF-350 Ion Beam Etching System — wotol.comwotol.com
- [4]Equipment inventory listing
- [5]waferpedia.com — waferpedia.comwaferpedia.com
Last updated Sep 29, 2026.
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