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Oxford Instruments

100 ICP Fluorine

EtchOxford Instruments 100 ICP Fluorine family
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This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

The Oxford 100 ICP Fluorine Etcher is an inductively coupled plasma etcher used for fluorine-based etching processes.[1]

Oxford Instruments100 ICP Fluorine
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Vacuum

up to 5 µm/min[2]

Gas delivery

SF6, CF4, O2, Ar, N2, CHF3, C4F8[2]

What it is

The Oxford Instruments 100 ICP Fluorine Etcher is an inductively coupled plasma (ICP) etcher designed for fluorine-based etching processes. The tool is categorized under semiconductor etch equipment. The Oxford 100 ICP is a model of plasma etcher manufactured by Oxford Instruments.[1][3]

Where it fits in the process flow

General reference — not yet source-verified

The Oxford Instruments 100 ICP Fluorine Etcher is used in semiconductor fabrication and microelectromechanical systems (MEMS) processing. The tool sits in the etch module of a fab, downstream of lithography and photoresist patterning steps. After etching, wafers typically proceed to photoresist stripping and cleaning steps.

Applications

The tool supports high-aspect-ratio etching with minimal undercut. Material etch rates have been characterized for processes using the Oxford 100 ICP. The tool can perform a cryogenic DRIE process and a two-step DRIE process using SF6 and C4F8 gases for passivation.[2]

What do the numbers mean?

Vacuum & pumping1

Cryo DRIE etch rate
up to 5 µm/min[2]
Accurate?

Wafer handling1

Wafer size
4 inch, 6 inch, 8 inch (with clamp change)[2]
Accurate?

Gas & chemistry1

Etch Gases
SF6, CF4, O2, Ar, N2, CHF3, C4F8[2]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[2]
  • Cryo DRIE etch rateup to 5 µm/min[2]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What etch gases does the Oxford 100 ICP support?

The Oxford 100 ICP supports etch gases SF6, CF4, O2, Ar, N2, CHF3, and C4F8.[2]

What wafer sizes can the Oxford 100 ICP handle?

The Oxford 100 ICP handles 4-inch wafers standard, and can accommodate 6-inch or 8-inch wafers with a clamp change.[2]

Not publicly documented

The following facts about the 100 ICP Fluorine are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 100 ICP Fluorine are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the 100 ICP Fluorine are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the 100 ICP Fluorine are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 100 ICP Fluorine are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the 100 ICP Fluorine is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]nanofab.utah.edu — nanofab.utah.edunanofab.utah.edu
  3. [3]100 ICP Fluorine — Oxford Instruments | Specs, Sourcing & Service | Waferpedia — waferpedia.comwaferpedia.com
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Last updated Sep 23, 2026.

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