Nexus IBE350

The Veeco Nexus IBE350 is a broad-beam ion etcher used for physical sputter etching of materials in semiconductor and microelectronics fabrication.^[1]

The system is designed for etching materials that are difficult to process with conventional plasma-based etching, including piezo and ferro electrics, magnetic materials, III-V semiconductors, ohmic metals, and hard mask materials.^[1]

The Nexus IBE350 generates a mono-energetic beam of argon ions using an inductively coupled plasma (ICP) source with a 350 mm diameter quartz vessel and an RF generator operating at 1.8 MHz with a maximum power of 2 kW.^[1]

Ion beam extraction and collimation are achieved through a three-grid molybdenum electrostatic optics system. The grids are biased to extract, accelerate, and collimate the ions, while a decelerator grid at ground potential reduces beam divergence and prevents electron back-streaming from the neutralizer.^[1]

A plasma bridge neutralizer downstream of the optics emits electrons to prevent space or surface charging of the substrate. A mechanical shutter between the optics and the process chamber allows beam stabilization before etching begins.^[1]

A secondary ion mass spectroscopy (SIMS) system collects and analyzes secondary ions ejected from the sample surface, providing real-time end point detection during the etch process.^[1]

The Nexus IBE350 is employed in process flows where ion beam etching is required, typically after photolithographic patterning and before subsequent deposition or metrology steps. The system processes wafers or substrates mounted on the cooled, rotating fixture.^[1]

Because the etch mechanism is purely physical sputtering with no chemical dependence, the IBE350 can be used for materials that are resistant to reactive plasma etch chemistries, such as noble metals, and for processes where anisotropic profiles or low ion damage are critical.^[1]

The system is used for etching piezo and ferro electric materials, magnetic materials, III-V semiconductors (GaAs, InP, GaN, AlN), ohmic metals (Au, Pt, Cu, Ir), and hard mask materials (Ag, TiWN, Ni). The broad energy range from 50 V to 800 V supports processes from low-damage etching to high-rate removal.^[1]

The high vacuum capability (base pressure in the 10⁻⁷ mbar range) and the use of pure physical sputtering eliminate chamber contamination and memory effects, making the system suitable for processes requiring high cleanliness and material isolation.^[1]