Tokyo Electron
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Wet etching systems remove material from semiconductor wafers by immersing them in liquid chemical etchants.
Wet oxide etchers specifically use chemical solutions that selectively remove silicon dioxide without attacking the underlying silicon or other materials.
Wet etching is used at various stages of semiconductor fabrication after oxide deposition or growth to define patterns or remove layers.
Wet etch tools are typically placed after lithography and before resist strip or other cleaning steps in the process flow.
The TE 8501 Wet Oxcide is used for wet etching of oxide layers in semiconductor device fabrication.
Wet oxide etching is employed in processes such as contact opening, via formation, and sacrificial oxide removal.
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The following facts about the TE 8501 Wet Oxcide are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the TE 8501 Wet Oxcide are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the TE 8501 Wet Oxcide are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the TE 8501 Wet Oxcide are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the TE 8501 Wet Oxcide are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the TE 8501 Wet Oxcide is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 9, 2026.
The Applied Materials 0010-47763 is an electrostatic chuck (ESC) assembly used in semiconductor etching processes.
The Applied Materials 0010-16392 is an electrostatic chuck assembly designed for 300 mm wafer processing, featuring a dual electrode configuration.
Oxford Instruments 100 ICP Fluorine is an inductively coupled plasma etcher for fluorine-based etching, supporting cryo DRIE and multiple etch gases including SF6 and C4F8.