SB 6 E

The SUSS MicroTec SB 6 E is a substrate bonder. The SB 6 E is a semi-automatic, computer-controlled system. The SB 6 E has a bond chamber with both vacuum- and pressure-controlled atmosphere capability. The SB 6 E is configurable for 200 mm and smaller wafer sizes and stack thicknesses up to 6 mm. The SB 6 E provides post bond alignment accuracy up to 1 μm. The SB 6 E uses independent top and bottom heaters and active cooling. The SB 6 E uses a gate valve-type load/unload port.^[2][1]

The SB 6 E bond chamber supports vacuum and pressurized ambient up to 3 bar. A small gate valve-type load/unload port minimizes chamber exposure to ambient atmosphere. The SB 6 E uses an ergonomic loading slide that moves the transport fixture into the chamber and separates the operator from heater, pressure, and voltage systems. Independent top and bottom heaters compensate for different thermal expansion coefficients. Active cooling shortens process cycle times. A feedback control system keeps bond pressure consistent and independent of chamber pressure or vacuum.^[1]

The SB 6 E uses a Windows-based graphical user interface to control the bonding process automatically. Software functions include automatic error checking, simultaneous actions, ramp programming, and full manual processing for research. Universal bond tools combine anodic and thermo-compression capabilities in a single unit. A center push-pin presses the wafers together to preserve alignment accuracy despite thermal expansion. Disposable and exchangeable plates eliminate the effects of sodium migration during anodic bonding. The thermo-compression tool provides a maximum bond force up to 20 kN.^[1]

Bonding is the final step in a process sequence in which multiple wafers or substrates are attached together. In the SUSS modular architecture, the SB 6 E sits after cleaning and alignment modules. A transport fixture links the cleaning, alignment, and bonding modules in the SUSS architecture. Some bond processes, such as fusion bonding, require post bond annealing after the SB 6 E completes the bond.^[1]

The SB 6 E supports anodic, eutectic, glass frit, fusion, thermo-compression, SOI, adhesive, and temporary bonding processes. The SB 6 E is suited to MEMS, 3-D interconnects, and opto-electronics applications. With an optional low-temperature plasma activation module, the SB 6 E enables fusion bonding of SOI, III/V, and SiGe compounds at temperatures down to 200 °C. The SB 6 E supports adhesive bonding with benzocyclobutene (BCB) and SU8 resist. The SB 6 E offers options for triple-stack bonding and hot embossing.^[1]