Perkin Elmer
4400
The Perkin Elmer 4400 is a sputtering system for physical vapor deposition. The Perkin Elmer 4400 supports wafer sizes up to 6 inches. The Perkin Elmer 4400 can be configured for DC and RF sputtering with RF bias capability.[1][2][3]
What it is
The Perkin Elmer 4400 is a sputtering system used for physical vapor deposition in semiconductor manufacturing.[4][1][2][3]
How it works
General reference — not yet source-verifiedA sputtering system removes material from a target and deposits that material onto a substrate under vacuum.
Physical vapor deposition is a vacuum deposition family in which material is transferred from a source to the wafer surface as a thin film.
Where it fits in the process flow
General reference — not yet source-verifiedThe Perkin Elmer 4400 belongs in the thin-film deposition portion of the fabrication flow.
Applications
What do the numbers mean?
What replaced it?
Alternatives
Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.
- Applied Materials Endura HP— Same function class: Deposition, nullCompare in depthsource[5]
- Denton Vacuum Discovery Cathode— Same function class: Deposition, nullCompare in depthsource[6]
- Applied Materials Endura 5500— Same function class: Deposition, nullCompare in depthsource[7]
- Applied Materials Endura 2— Same function class: Deposition, nullCompare in depthsource[8]
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- ConfigurationPump Exhaust GEEX[2]
- ConfigurationPower Supply[2]
- ConfigurationBacking Pump[2]
- ConfigurationCryo Compressor[2]
- ConfigurationMechanical Pump[2]
- CDA60-80 psi[2]
- N250 psi[2]
- HPN260 psi[2]
- HPAr10 psi[2]
- O210 psi[2]
- Power208 V, 3 Phase, 60 A[2]
- ConfigurationThe system is DC and RF, with DC-RF bias capable.[3]
- ConfigurationIt does have the RF etch option.[3]
- Sputtering TypesDC, RF, DC-RF bias capable[3]
- Target PositionsPorts for four targets; three utilized (two DC with RF bias, one RF)[3]
- RF Etch OptionYes[3]
- Pump - Main ChamberCryotorr 8 cryopump with CTI SC (air-cooled) He compressor[3]
- Pump - Load LockPfeiffer turbopump backed by Trivac rotary vane pump[3]
- Roughing PumpEbara A10 roots pump[3]
- Power SupplyPresent[2]
- Backing PumpPresent[2]
- Cryo CompressorPresent[2]
- Mechanical PumpPresent[2]
- CDA Supply60-80 psi[2]
- N2 Supply50 psi[2]
- HPN2 Supply60 psi[2]
- HPAr Supply10 psi[2]
- O2 Supply10 psi[2]
- Power Requirement208 V, 3 Phase, 60 A[2]
- Pump ExhaustGEEX[2]
- Process modesDC and RF, with DC-RF bias capable[3]
- OptionsRF etch option[3]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
How is film thickness controlled and monitored?General reference — not yet source-verified
Film thickness is typically controlled by deposition rate and time, monitored with quartz crystal microbalances or optical interferometry, and verified with profilometry or ellipsometry.
What factors affect film uniformity across the substrate?General reference — not yet source-verified
Uniformity is influenced by source-to-substrate geometry, substrate rotation, gas flow distribution, and temperature gradients. Systems may include planetary motion or stationary fixtures to improve uniformity.
What vacuum level is necessary for deposition processes?General reference — not yet source-verified
High to ultra-high vacuum is typically required to minimize contamination and ensure film purity. The specific level depends on the deposition method and material sensitivity.
Can this system handle different substrate sizes and shapes?General reference — not yet source-verified
Many deposition systems accept various substrate sizes and shapes through interchangeable pallets, holders, or chuck assemblies, though maximum dimensions are limited by chamber size.
Not publicly documented
The following facts about the 4400 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 4400 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 4400 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 4400 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 4400 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 4400 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (8)Every fact above is drawn from these public sources
- [1]Equipment inventory listing
- [2]Inventory photo
- [3]Inventory photo
- [4]Equipment inventory listing
- [5]fabsurplus.comfabsurplus.com
- [6]Equipment inventory listing
- [7]chiphistory.orgchiphistory.org
- [8]web.archive.orgweb.archive.org
Last updated Oct 1, 2026.
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The Denton Discovery Cathode Deposition System is a 12.0-inch sputtering system with planetary load lock and robot loading assemblies.
Applied Materials Endura 2 is a 12-inch PVD (physical vapor deposition) system used for liner/barrier and front-end metallization applications.
Applied Materials Endura 5500 is a PVD (Physical Vapor Deposition) system for 8-inch wafers.
Applied Materials Endura HP is a PVD sputter physical vapor deposition system.
