Waferpedia

Oxford Instruments

Plasmalab80

Etchup to 8-inch diameter wafersOxford Instruments Plasmalab80 family
Research Quality: 30% complete
LinkedIn X Email
Oxford InstrumentsPlasmalab80
No photo available yet

  • Plate 01Oxford Instruments Plasmalab 80+ DPCVD semiconductor equipment

    SemiStarWatch on YouTube

  • Plate 02Oxford PlasmaLab 80 Plus RIE PECVD Semiconductor equipment ~8 inch

    SemiStarWatch on YouTube

  • Plate 03Plasmalab 80 Plus RIE

    Bid ServicellcWatch on YouTube

  • Plate 04Oxford Plasmalab 80 Plus PECVD System (ID# 3908)

    ClassOneEngineeringWatch on YouTube

Wafer size

up to 8-inch diameter wafers

Power

300 W RF and 300 W ICP[1]

Vacuum

Bosch (gas chopping) or cryo processes[1]

What is it?

The Oxford Instruments Plasmalab80 combines etch and deposition capabilities in one tool. The source states that it can etch high aspect ratio features using Bosch or cryo processes, deposit silicon dioxide, silicon nitride, or mixed oxynitrides at room temperature, and process wafers up to 8 inches in diameter, with the active etch/deposition region in the center 4 inches of the chamber.

What can it run?

Process applications and technology nodes documented for this tool.

  • Plasma etching
  • Material growth
  • Cleanroom nanofabrication
  • Nano and micro fabrication

What do the numbers mean?

Power & electrical1

Power
300 W RF and 300 W ICP[1]
Accurate?

Vacuum & pumping2

Etch processes
Bosch (gas chopping) or cryo processes[1]
Accurate?
Process pressure
4 to 100 mTorr[1]
Accurate?

Wafer handling2

Wafer diameter
Up to 8-inch wafers[1]
Accurate?
Substrate temperature
-150 to 200 C[1]
Accurate?

Gas & chemistry1

Available gases
N2, N2O, O2, SF6, Ar (max flow 100 sccm); C4F8, SiH4, CH4 (max flow 20 sccm)[1]
Accurate?

Configuration & options3

Etch and deposition capabilities
Combined etch and deposition tool[1]
Accurate?
Deposition materials
Silicon dioxide, silicon nitride, or mixed oxynitrides[1]
Accurate?
Active etch/deposition region
Center 4 inches of the chamber[1]
Accurate?
Interested in this tool?
Need help with this tool?Embed spec card

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Etch processesBosch (gas chopping) or cryo processes[1]
  • Available gasesN2, N2O, O2, SF6, Ar (max flow 100 sccm); C4F8, SiH4, CH4 (max flow 20 sccm)[1]
  • Power300 W RF and 300 W ICP[1]
  • Process pressure4 to 100 mTorr[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

No research found yet — worked with this tool? Share what you know.

Worked with this tool? Help preserve its knowledge →

Not publicly documented

The following facts about the Plasmalab80 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Plasmalab80 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the Plasmalab80 are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the Plasmalab80 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the Plasmalab80 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the Plasmalab80 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (1)Every fact above is drawn from these public sources
  1. [1]tmi.utexas.edu — tmi.utexas.edutmi.utexas.edu
Was this page accurate?

Last updated Sep 22, 2026.

Compare with similar tools

View all →
0010 47763Applied Materials

The Applied Materials 0010-47763 is an electrostatic chuck (ESC) assembly used in semiconductor etching processes.

CategoryEtch
9 specs
Plasmalab80 vs 0010 47763 →
0010-16392 ESC AssemblyApplied Materials

The Applied Materials 0010-16392 is an electrostatic chuck assembly designed for 300 mm wafer processing, featuring a dual electrode configuration.

CategoryEtch
5 specs
Plasmalab80 vs 0010-16392 ESC Assembly →
0041-39086 ESC PartApplied Materials
CategoryEtch
Plasmalab80 vs 0041-39086 ESC Part →
100 ICP FluorineOxford Instruments

Oxford Instruments 100 ICP Fluorine is an inductively coupled plasma etcher for fluorine-based etching, supporting cryo DRIE and multiple etch gases including SF6 and C4F8.

CategoryEtch
3 specs
Plasmalab80 vs 100 ICP Fluorine →
1511eTegal

The Tegal 1511e is a tri-electrode dual-frequency plasma etch system for processing three- to six-inch wafers.

CategoryEtchWaferthree- to six-inch wafers
5 specs
Plasmalab80 vs 1511e →
1512eTegal

The Tegal 1512e is an industrial RIE plasma etcher system with modules assembly for CI-4222.

CategoryEtch
2 specs
Plasmalab80 vs 1512e →