Waferpedia

Axcelis

NV GSD 200 Ion

Ion ImplantationAxcelis NV GSD 200 family
Research Quality: 50% complete

The Axcelis NV GSD 200 is an ion implanter supporting 6-inch wafers. The NV GSD 200 operates at a total energy of 200 KEV with a beam current of 50 mA. The NV GSD 200 has a throughput of 210 pieces per hour and a dose range of 5E11 to 1E16 ions/cm2.[1]

NV GSD 200 Ion — Inventory photo
Fig. 01NV GSD 200 IonInventory photo[1]

Power

3 Phase[1]

Performance

210 pieces/hour[1]

Gas delivery

B/As/Ar[1]

What it is

The Axcelis NV GSD 200 is an ion implanter for semiconductor wafer processing.[1]

How it works

The Axcelis NV GSD 200 supports variable implant angle control on two axes.[1]

The Axcelis NV GSD 200 uses a belt type rotary drive and a real time dose controller.[1]

Where it fits in the process flow

General reference — not yet source-verified

Ion implantation is a front-end wafer doping step that follows pattern definition and precedes subsequent thermal steps used to activate or redistribute implanted species.

Applications

The Axcelis NV GSD 200 is suitable for wafer doping tasks that require a total energy of 200 keV, a beam energy of 5 keV, post acceleration high voltage of 80 keV, and a beam current of 50 mACE.[1]

What do the numbers mean?

Power & electrical5

Phase
3 Phase[1]
Accurate?
Voltage
208V, 710A[1]
Accurate?
Post acceleration high voltage, 80 KEV[1]
Accurate?
Power
3 Phase, 208V, 710A[1]
Accurate?
Post acceleration high voltage
80 KEV[1]
Accurate?

Wafer handling5

(25) Slots cassette[1]
Accurate?
(4) cassettes capacity[1]
Accurate?
Wafer size
6 inch[1]
Accurate?
Cassette
25 slots, 4 cassettes capacity[1]
Accurate?
Wafer holder
Std 150mm[1]
Accurate?

Gas & chemistry6

Gases
B/As/Ar[1]
Accurate?
(2) SDS gas lines (ASH3 and PH3)[1]
Accurate?
(2) HP Gas lines (BF3 and ARGON)[1]
Accurate?
Process gases
B/As/Ar[1]
Accurate?
SDS gas lines
2 lines (ASH3 and PH3)[1]
Accurate?
HP gas lines
2 lines (BF3 and ARGON)[1]
Accurate?

Performance1

Throughput
210 pieces/hour[1]
Accurate?

Control & software4

VME 177 cell controller[1]
Accurate?
Real time patented dose controller[1]
Accurate?
Control hardware
2 SUN Workstations, VME 177 cell controller[1]
Accurate?
Dose controller
Real-time patented dose controller[1]
Accurate?

Configuration & options18

Total energy
200 KEV[1]
Accurate?
Features:[1]
Accurate?
ELS source head[1]
Accurate?
(2) SUN Workstations[1]
Accurate?
P-Shower Electron shower[1]
Accurate?
Belt type rotary drive[1]
Accurate?
Variable implant angle, 2-Axis[1]
Accurate?
5E11~1E16 Ions/cm2 dose range[1]
Accurate?
Arm Std Arm 150mm[1]
Accurate?
Source head
ELS source head[1]
Accurate?
Drive
Belt type rotary drive[1]
Accurate?
Implant angle
Variable, 2-axis[1]
Accurate?
Dose range
5E11~1E16 Ions/cm2[1]
Accurate?
Arm
Std Arm 150mm[1]
Accurate?
Beam energy
5 KeV[1]
Accurate?
Beam current
50 mA[1]
Accurate?
Electron shower
P-Shower electron shower[1]
Accurate?
CE marking
CE marked[1]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Phase3 Phase[1]
  • Voltage208V, 710A[1]
  • GasesB/As/Ar[1]
  • Configuration(2) SDS gas lines (ASH3 and PH3)[1]
  • Configuration(2) HP Gas lines (BF3 and ARGON)[1]
  • ConfigurationPost acceleration high voltage, 80 KEV[1]
  • Power3 Phase, 208V, 710A[1]
  • Process gasesB/As/Ar[1]
  • SDS gas lines2 lines (ASH3 and PH3)[1]
  • HP gas lines2 lines (BF3 and ARGON)[1]
  • Post acceleration high voltage80 KEV[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Not publicly documented

The following facts about the NV GSD 200 Ion are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the NV GSD 200 Ion are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the NV GSD 200 Ion are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the NV GSD 200 Ion are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the NV GSD 200 Ion are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the NV GSD 200 Ion is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (1)Every fact above is drawn from these public sources
  1. [1]Inventory photo
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Last updated Oct 11, 2026.

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