ASML

The ASML Twinscan 1950 i is an immersion photolithography scanner. The scanner is used for semiconductor wafer patterning.[1][2]
Immersion scanners are deployed for the most critical device layers, where highest resolution and overlay accuracy are required. The pattern created by the scanner is used by downstream processes such as etching and deposition.
Immersion lithography is used in advanced memory fabrication, including DRAM and NAND flash, to define tight pitch arrays. Immersion lithography also enables multipatterning techniques such as self-aligned double patterning and self-aligned quadruple patterning when single-exposure resolution is insufficient.
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The following facts about the Twinscan 1950 i Immersion are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Twinscan 1950 i Immersion are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Twinscan 1950 i Immersion are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Twinscan 1950 i Immersion are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Twinscan 1950 i Immersion are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Twinscan 1950 i Immersion is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Sep 24, 2026.
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