Tokyo Electron
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The Tokyo Electron Certas RST is a dry etcher process chamber. The Certas RST process chamber handles 300mm wafers.[1]
Dry etch chambers use a low-pressure reactive gas plasma to remove material from the wafer surface. The plasma is generated by applying radio-frequency power to an electrode, which ionizes process gases such as fluorine- or chlorine-based compounds.
The chamber encloses the wafer on a temperature-controlled pedestal. Process gases are introduced through a showerhead and the plasma etches exposed areas of the wafer, typically defined by a patterned photoresist mask. Byproducts are exhausted through a vacuum pump.
Etching follows the resist coating, exposure, and development steps and precedes resist stripping and cleaning. The chamber can be configured for different etch chemistries and endpoint detection methods.
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The following facts about the Certas RST Process are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
Fewer than 3 independently cited specifications for the Certas RST Process are on record; the remainder await public documentation.
Answerable by: an OEM datasheet, a cleanroom equipment inventory, or an engineer who operated or installed it
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Certas RST Process are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Certas RST Process are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Certas RST Process are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Certas RST Process are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
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Last updated Sep 29, 2026.
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