Hitachi
The Hitachi 4800 is a scanning electron microscope. The Hitachi 4800 uses an in-lens SE detector and an Everhart-Thornley SE detector. The Hitachi 4800 uses a magnetic semi-immersion TFE source.[1]
Plate 01Hitachi S-4800 Demonstration
The Hitachi Model S-4800 is a field emission scanning electron microscope (SEM).[2]
A scanning electron microscope is an instrument that scans a focused beam of primary electrons onto a sample and collects secondary electrons emitted from the sample to form an image.[1]
The S-4800 is designed mainly for observation and evaluation of specimens prepared for SEM observation.[2]
The S-4800 utilizes an electron beam accelerated at 500 V to 30 kV.[2]
Field emission electron sources supply high brightness beams of electrons that can be focused into small probe diameters, and field emission guns form a virtual source of electrons with a small diameter requiring less complicated focusing optics.[1]
In a scanning electron microscope, the electron beam is focused and deflected by a column containing lenses and apertures, and the specimen is brought into focus by moving the specimen and the crossover to the same working distance.[1]
The signal in a scanning electron microscope is caused by the entire interaction volume within the sample, not just the probe diameter, and the probability of electron emission depends on accelerating voltage and atomic number.[1]
Scanning electron microscopes are typically used for metrology and inspection in a fabrication environment, providing high-magnification imaging of surface features on specimens.
An SEM is often placed after a patterning or deposition step to inspect the resulting structures for defects, critical dimensions, or morphology before further processing.
Scanning electron microscopy is used to observe the surface structure of a wide range of specimens, including materials and devices at the micrometer and nanometer scale.
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The SEM forms images from emitted electrons, especially secondary electrons, collected from the sample after the primary beam interacts with the surface.[1]
A modern SEM includes an electron source, focusing and deflection optics, a specimen stage, a detection system, and an image acquisition and control system.[1]
The secondary-electron detector is strongly dependent on sample orientation and topography and is used for surface detail imaging.[1]
The backscattered-electron signal increases with atomic number, so backscattered-electron imaging is used for compositional or Z contrast.[1]
The objective aperture affects probe current, convergence angle, resolution, and depth of field.[1]
The following facts about the 4800 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 4800 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 4800 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 4800 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 4800 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 4800 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 12, 2026.
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