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Hitachi

4800

Metrology & InspectionHitachi 4800 family
Research Quality: 40% complete

The Hitachi 4800 is a scanning electron microscope. The Hitachi 4800 uses an in-lens SE detector and an Everhart-Thornley SE detector. The Hitachi 4800 uses a magnetic semi-immersion TFE source.[1]

Hitachi logo
Fig. — Manufacturer logo, not a photo of this toolWikimedia Commons (see file page for license)
  • Plate 01Hitachi S-4800 Demonstration

    CSK InternationalWatch on YouTube

Power

500 V to 30 kV[2]

Optics

Modern high resolution FE SEM[1]

What it is

The Hitachi Model S-4800 is a field emission scanning electron microscope (SEM).[2]

A scanning electron microscope is an instrument that scans a focused beam of primary electrons onto a sample and collects secondary electrons emitted from the sample to form an image.[1]

The S-4800 is designed mainly for observation and evaluation of specimens prepared for SEM observation.[2]

How it works

The S-4800 utilizes an electron beam accelerated at 500 V to 30 kV.[2]

Field emission electron sources supply high brightness beams of electrons that can be focused into small probe diameters, and field emission guns form a virtual source of electrons with a small diameter requiring less complicated focusing optics.[1]

In a scanning electron microscope, the electron beam is focused and deflected by a column containing lenses and apertures, and the specimen is brought into focus by moving the specimen and the crossover to the same working distance.[1]

The signal in a scanning electron microscope is caused by the entire interaction volume within the sample, not just the probe diameter, and the probability of electron emission depends on accelerating voltage and atomic number.[1]

Where it fits in the process flow

General reference — not yet source-verified

Scanning electron microscopes are typically used for metrology and inspection in a fabrication environment, providing high-magnification imaging of surface features on specimens.

An SEM is often placed after a patterning or deposition step to inspect the resulting structures for defects, critical dimensions, or morphology before further processing.

Applications

General reference — not yet source-verified

Scanning electron microscopy is used to observe the surface structure of a wide range of specimens, including materials and devices at the micrometer and nanometer scale.

What do the numbers mean?

Power & electrical1

Accelerating voltage
500 V to 30 kV[2]
Accurate?

Optics & imaging6

Instrument type
Modern high resolution FE SEM[1]
Accurate?
Detector
In Lens SE[1]
Accurate?
Detector
E-T SE[1]
Accurate?
Objective lens
Magnetic semi immersion[1]
Accurate?
Lens design
Magnetic semi-immersion[1]
Accurate?
Detectors
In-lens SE, E-T SE[1]
Accurate?

Configuration & options3

Source
TFE[1]
Accurate?
Instrument type
Field emission scanning electron microscope[2]
Accurate?
Source type
TFE[1]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Accelerating voltage500 V to 30 kV[2]

Where are the manuals?

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Not publicly documented

Field notes

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Frequently asked questions

What does the SEM image signal come from?

The SEM forms images from emitted electrons, especially secondary electrons, collected from the sample after the primary beam interacts with the surface.[1]

What are the main parts of a scanning electron microscope?

A modern SEM includes an electron source, focusing and deflection optics, a specimen stage, a detection system, and an image acquisition and control system.[1]

Which detector is used for surface topography?

The secondary-electron detector is strongly dependent on sample orientation and topography and is used for surface detail imaging.[1]

Which detector is used for compositional contrast?

The backscattered-electron signal increases with atomic number, so backscattered-electron imaging is used for compositional or Z contrast.[1]

What part of the column affects resolution and depth of field?

The objective aperture affects probe current, convergence angle, resolution, and depth of field.[1]

Not publicly documented

The following facts about the 4800 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 4800 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the 4800 are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the 4800 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 4800 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the 4800 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (2)Every fact above is drawn from these public sources
  1. [1]cnfusers.cornell.edu — cnfusers.cornell.educnfusers.cornell.edu
  2. [2]scu.edu — scu.eduscu.edu
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Last updated Oct 12, 2026.

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