Aixtron
AIX G5 WW C
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
The AIX G5 WW C is an AIXTRON MOCVD system for silicon carbide (SiC) deposition. The AIX G5 WW C uses a warm-wall planetary reactor design. The AIX G5 WW C is listed on AIXTRON's product overview page.[1]
What it is
How it works
The AIX G5 WW C employs a planetary rotating reactor architecture with hot-wafer transfer to minimize thermal transients during loading and unloading.[4][3]
The reactor is a hot-wall design that provides thermal symmetry and efficient precursor gas utilization.[4]
Wafer-level temperature control is achieved through multi-zone radiant heating and real-time pyrometric feedback, enabling thermal stability across wafers.[4]
The system includes an AutoSat dynamic saturation compensation algorithm that adjusts precursor flow and pressure to maintain consistent supersaturation during runs.[4][3]
Automated cassette-to-cassette wafer handling is integrated, compliant with SEMI E47.1 standards, and a SECS/GEM factory interface supports host-directed scheduling and recipe management.[4][3]
The AIX G5 WW C operates with an 8×150 mm single-wafer configuration, allowing batch processing with individual wafer rotation.[4][2][3]
Where it fits in the process flow
Applications
Primary applications include homoepitaxial and heteroepitaxial growth of 4H-SiC for high-power Schottky diodes and MOSFETs, and AlGaN/GaN heterostructures for RF HEMTs.[4]
The system is also used for doped and undoped GaN templates for micro-LED and laser diode fabrication.[4]
The AIX G5 WW C targets the high-volume production of silicon carbide epitaxial wafers for power electronics, addressing applications in electro-mobility, wind and solar energy, and efficient motor drives.[2][3]
- SiC deposition
What do the numbers mean?
Power & electrical1
- Target Applications
- SiC, GaN, and other compound semiconductor epitaxy; power electronics, RF devices, high-voltage applications[4]
Vacuum & pumping1
- Process Type
- Chemical vapor deposition (CVD); MOCVD; atmospheric and low-pressure CVD modes[4]
Wafer handling5
- Substrate / Wafer Configuration
- 150 mm (6-inch) wafers; 8x150 mm configuration with single-wafer rotation; optional adaptability for future 200 mm expansion[4]
- Wafer Handling
- Cassette-to-cassette automated handling (SEMI E47.1 compliant), with integrated front-end EFEM modules; hot wafer transfer in planetary reactor[4]
- Temperature Control
- Wafer-level temperature control via multi-zone radiant heating and real-time pyrometric feedback, enabling ±0.5 °C thermal stability across 150 mm wafers[4]
- System Model Year (example unit)
- 2022 model MOCVD system with automated wafer transfer module, 1 Epison 5 and EpiCurve TT® AR 3W[5]
Gas & chemistry3
- Category
- Deposition system for compound semiconductors / Chemical vapor deposition (CVD) system[3]
- Gas Delivery
- Modular gas delivery architecture with MFCs, ultra-high-purity stainless-steel lines, automated purge sequences meeting ISO 8573-1 Class 1 particle and moisture requirements[4]
- Gas Configuration (example unit)
- Hydride lines: C3H8 x 3, HCl x 1, N2 x 1; MO source/dopant lines: TCS x 1, TMAl x 2[5]
Optics & imaging2
- Epitaxial Quality Metrics
- Repeatability in thickness (±1.2 %), doping (±3 %), and surface roughness (RMS <0.3 nm)[4]
Performance1
- Uniformity Control
- AutoSat™ dynamic saturation compensation algorithm; AutoSat feature for within-batch uniformity[4]
Control & software2
- Software Control
- AIXTRON EPISON® platform; audit-trail functionality compliant with FDA 21 CFR Part 11[4]
Configuration & options8
- Cleanroom Compliance
- Designed for integration into ISO Class 5–7 cleanroom environments; ISO Class 6 recommended for optimal particle performance; compatible with SEMI S2/S8 safety and automation standards[4]
Vintage & configurations
- 2019-09-30System presentation[2]
AIXTRON presented the new AIX G5 WW C system for high-volume production of next-generation SiC epitaxial wafers at ICSCRM 2019 in Kyoto, Japan (29 September – 4 October 2019).
Documented models & variants
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| AIX G5 WW C (SiC) | — | — | AIXTRON product page labels the AIX G5 WW C as the SiC variant of the AIX G5 WW C line. | aixtron.com[3] |
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- CategoryDeposition system for compound semiconductors / Chemical vapor deposition (CVD) system[3]
- Process TypeChemical vapor deposition (CVD); MOCVD; atmospheric and low-pressure CVD modes[4]
- Target ApplicationsSiC, GaN, and other compound semiconductor epitaxy; power electronics, RF devices, high-voltage applications[4]
- Gas DeliveryModular gas delivery architecture with MFCs, ultra-high-purity stainless-steel lines, automated purge sequences meeting ISO 8573-1 Class 1 particle and moisture requirements[4]
- Gas Configuration (example unit)Hydride lines: C3H8 x 3, HCl x 1, N2 x 1; MO source/dopant lines: TCS x 1, TMAl x 2[5]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What wafer size and configuration does the AIX G5 WW C support?
The AIX G5 WW C supports an 8×150 mm (6-inch) configuration with single-wafer rotation.[4][2][3]
What automation and factory interface standards does the system comply with?
The system provides cassette-to-cassette wafer handling compliant with SEMI E47.1, and a SECS/GEM factory interface compliant with SEMI E30/E37.[4]
Not publicly documented
The following facts about the AIX G5 WW C are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
The control-system platform and OS era of the AIX G5 WW C are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the AIX G5 WW C are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the AIX G5 WW C is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the AIX G5 WW C are on record.
Answerable by: an OEM parts catalog or a service engineer
No publicly hosted manuals, SOPs, or datasheets for the AIX G5 WW C are on record.
Answerable by: university cleanroom staff or an OEM application specialist
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (5)Every fact above is drawn from these public sources
- [1]aixtron.com — aixtron.comaixtron.com
- [2]semiconductor-today.com — semiconductor-today.comsemiconductor-today.com
- [3]aixtron.com — aixtron.comaixtron.com
- [4]instrumenthive.com — instrumenthive.cominstrumenthive.com
- [5]exhibitors.asiaphotonicsexpo.comexhibitors.asiaphotonicsexpo.com
Last updated Oct 9, 2026.
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