Comparison ledger
Oxford Instruments 100 ICP Fluorine, Plasma-Therm Versaline VCX 600 ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | Versaline VCX 600 ICPPlasma-Therm |
|---|---|---|
| OEM | Oxford Instruments | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Plasma-Therm Versaline |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| Phase | — | 1 Phase[2] |
| Configuration | — | 3 Wire[2] |
| Source Generator | — | ENI MKS GMW25[2] |
| Wafer Size | — | 6 inch[2] |
| Electrical Input | — | 1 Phase, 3 Wire, 50/60 Hz, 208/230 Vac, 15 A[2] |
| Included Equipment | — | Chillers, Transformer, Pumps[2] |
| Electrical Configuration | — | 1 Phase - 3 Wire - 50/60 Hz - 208/230 Vac - 15 A[2] |
| Vintage | — | 2013, 2014[2] |
| Included Components | — | Chillers, Transformer, Pumps[2] |
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