Waferpedia

Comparison ledger

Centura Super Eversus100 ICP Fluorine

Applied Materials Centura Super E, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
Centura Super EApplied Materials
100 ICP FluorineOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials CenturaOxford Instruments 100 ICP Fluorine
Specifications
Configuration3 Chamber Super E Positions a,b, and C[1]—
Wafer size8 inch[1]4 inch, 6 inch, 8 inch (with clamp change)[2]
Number of chambers3 Chamber Super E Positions a,b, and C[1]—
Loadlock typeWide Body Loadlocks[1]—
Vintage1997[1]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[2]
Cryo DRIE etch rate—up to 5 µm/min[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]nanofab.utah.edunanofab.utah.edu