Comparison ledger
PVA TePla 300, SUSS MicroTec Falcon, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 300PVA TePla | FalconSUSS MicroTec |
|---|---|---|
| OEM | PVA TePla | SUSS MicroTec |
| Category | Resist Processing | Resist Processing |
| Wafer size | 75 mm to 100 mm | Wafer Backside Rinse |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | PVA TePla 300 | SUSS MicroTec Falcon |
| Cited variants | — | |
| Specifications | ||
| Plasma type | High frequency plasma[2] | — |
| Plasma frequency | 2.45 GHz[2] | — |
| Plasma power | 200 to 1000 W[2] | — |
| Gas | O2 (max. flow 500 ml/min)[2] | — |
| Chamber | Quartz primary vacuum chamber, Dint. 245 mm x Prof. 380 mm[2] | — |
| Wafer capacity | Quartz holders for 25 wafers[2] | — |
| Wafer size range | 75 mm to 100 mm[2] | — |
| Micro-electronic compatibility | Not micro-electronic compatible[2] | — |
| Category | Plasma etcher (resist strip / surface activation)[2] | — |
| Positive resist etch rate | 350 nm/min[2] | — |
| Compatibility | Not micro-electronic compatible; gold allowed; Si, glass, Pyrex wafers[2] | — |
| Power Range | 200 to 1000 W (or 0-1000 W)[2] | — |
| Process Gases | O2, Ar, N2, CF4[3] | — |
| Chamber Material | Quartz[2] | — |
| Chamber Dimensions (internal) | Diameter 245 mm x Depth 380 mm[2] | — |
| Wafer Holder Capacity | 25 wafers[2] | — |
| Wafer Size | 75 mm to 100 mm[2] | — |
| Wafer Size (alternate) | up to 6 inches[1] | — |
| Process Pressure | 0.6 to 1.5 mbar[1] | — |
| Restricted Materials | Materials that deteriorate in oxygen (Ag, Cu, Cr, Fe, etc.) should not be processed; no Cr or other metals in chamber[2] | — |
| Microwave frequency | 2.45 GHz[2] | — |
| Power range | 200 to 1000 W[2] | — |
| Batch size | Up to 25 wafers[2] | — |
| Wafer diameter (standard carrier) | 75 mm to 100 mm[2] | — |
| Process gases | O2, CF4, Ar, N2[3] | — |
| Maximum O2 flow | 500 ml/min[2] | — |
| Chamber dimensions (internal diameter x depth) | 245 mm x 380 mm[2] | — |
| Chamber internal dimensions | Dint. 245 mm x Prof. 380 mm[2] | — |
| Gas 1 | O2 (max. flow 500 ml/min)[2] | — |
| Resist strip etch rate | 350 nm/min depending on number of wafers[2] | — |
| Faraday cage | Available[2] | — |
| Process gas | O2 (max flow 500 ml/min)[2] | — |
| Chamber dimensions | Quartz primary vacuum chamber, Dint. 245 mm x Prof. 380 mm[2] | — |
| Process type | High-frequency plasma[2] | — |
| Applications | Photoresist stripping; wafer surface cleaning; hydrophilic surface activation of plastics surfaces[2] | — |
| Carrier capacity | Quartz holders for 25 wafers[2] | — |
| Not micro-electronic compatible | This equipment is NOT micro-electronic compatible.[2] | — |
| Configuration | — | Polyimid[4] |
| Cassette Elevators | — | 2[4] |
| Developer Dispensers | — | 2[4] |
| Wafer size | — | Wafer Backside Rinse[4] |
| Number of Hot Plates | — | 0[4] |
| Number of Chill Plates | — | 0[4] |
| Controller Type | — | Microprocessor Controller[4] |
| Power Requirements | — | 380 V, 50/60 Hz, 3 Phase[4] |
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