Comparison ledger
Plasma-Therm Versaline ICP, Plasma-Therm Versaline ICP Deep Silicon, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Versaline ICPPlasma-Therm | Versaline ICP Deep SiliconPlasma-Therm |
|---|---|---|
| OEM | Plasma-Therm | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Plasma-Therm Versaline ICP | Plasma-Therm Versaline ICP |
| Cited variants | — | |
| Specifications | ||
| Configuration | 4 Process Modules[2] | 30 A, 4-Wire[4] |
| RF Power Supply | 500 W[3] | — |
| Wafer Size | 4" wafers or smaller samples mounted to 4" carrier wafers[3] | — |
| Gases Available | Cl2, BCl3, Ar, O2[3] | — |
| ICP Source Frequency | 2MHz[1] | — |
| Substrate Bias Frequency | 13.56MHz (optional 40MHz)[1] | — |
| Substrate Temperature Control | Backside helium cooling with mechanical or electrostatic clamping[1] | — |
| Control System | Cortex control system with EndpointWorks[1] | — |
| Phase | — | 208/220 VAC, 3 Phase[4] |
| Process type | — | Inductively coupled plasma etcher[4] |
| Application | — | Deep silicon etch[5] |
| Electrical requirements | — | 208/220 VAC, 3 phase, 30 A, 4-wire, 50/60 Hz[4] |
| Compatible materials | — | Si[5] |
| Incompatible materials | — | III-V / Hi K / Metal[5] |
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