Comparison ledger
Oxford Instruments 100 ICP Fluorine, Tokyo Electron TE 8500, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | TE 8500Tokyo Electron |
|---|---|---|
| OEM | Oxford Instruments | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Tokyo Electron TE 8500 |
| Cited variants | — | |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] | — |
| Cryo DRIE etch rate | up to 5 µm/min[2] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[2] | 6 inch[1] |
| Process type | — | Etch (Dry)[4] |
| Chambers (PESC Dry) | — | 1[1] |
| Application (PESC Dry) | — | Oxide etch with endpoint capability[1] |
| Vintage | — | 1994[4] |
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