Waferpedia

Comparison ledger

100 ICP Fluorineversus1511e

Oxford Instruments 100 ICP Fluorine, Tegal 1511e, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
1511eTegal
OEMOxford InstrumentsTegal
CategoryEtchEtch
Wafer size—three- to six-inch wafers
Process node——
Introduced—1984
Production run—1984–
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineTegal 1511e
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]—
tool type—tri-electrode dual-frequency plasma etch system[2]
wafer size—three- to six-inch wafers[2]
first sold—1984[2]
system characteristic—first vacuum-loadlocked dual-frequency tri-electrode etch system[2]
First vacuum-loadlocked dual-frequency tri-electrode etch system—Yes[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]web.archive.orgweb.archive.org