Comparison ledger
Oxford Instruments 100 ICP Fluorine, STS Multiplex ASE ICP Deep Silicon, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | |
|---|---|---|
| OEM | Oxford Instruments | STS |
| Category | Etch | Etch |
| Wafer size | — | Manual wafer lock |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | STS Multiplex |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | Manual wafer lock[2] |
| Configuration | — | Low and high frequency ICP (Inductively Coupled Plasma) etch system.[2] |
| OEM | — | STS[2] |
| Model | — | Multiplex ASE[2] |
| Equipment type | — | Deep Silicon Etcher (Inductively Coupled Plasma)[2] |
| Wafer sizes | — | 6 inch[2] |
| Wafer lock | — | Manual wafer lock[2] |
| Plasma frequency | — | Low and high frequency ICP (Inductively Coupled Plasma)[2] |
| Process description | — | ASE (Advanced Silicon Etch) process consists of alternating cycles of etching and protective polymer deposition[2] |
| Application | — | Deep Si trench etching of a single 6" [150mm] substrate[2] |
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