Waferpedia

Comparison ledger

100 ICP FluorineversusXeF2

Oxford Instruments 100 ICP Fluorine, SPTS XeF2, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
XeF2SPTS
OEMOxford InstrumentsSPTS
CategoryEtchEtch
Wafer size—Up to 6-inch wafers
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones—2013 Acquisition of XACTIX, Inc. · 2013 XACTIX acquisition
Control system——
Generation——
FamilyOxford Instruments 100 ICP FluorineSPTS XeF2
Specifications
Etch GasesSF6, CF4, O2, Ar, N2, CHF3, C4F8[1]—
Cryo DRIE etch rateup to 5 µm/min[1]—
Wafer size4 inch, 6 inch, 8 inch (with clamp change)[1]—
Etch type—Isotropic etch[2]
Selectivity—Over 1000:1 between Si/photoresist, Si/SiO2, and Si/SiN[2]
Gas flow modes—Continuous and pulsed gas flow[2]
Operating temperature—Room temperature[2]
Plasma—No plasma[2]
Substrate size—Up to 6-inch wafers[2]
Isotropic etch materials—Si, Mo, Ge, W, C[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]aggiefab.tamu.eduaggiefab.tamu.edu