Comparison ledger
Oxford Instruments 100 ICP Fluorine, SPTS RIE-10, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | RIE-10SPTS |
|---|---|---|
| OEM | Oxford Instruments | SPTS |
| Category | Etch | Etch |
| Wafer size | — | 6-inch wafers |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | SPTS RIE-10 |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | 6-inch wafers[3] |
| Etch rate | — | 6–10 µm/min[2] |
| Aspect ratio | — | 50:1[2] |
| Selectivity to resist | — | >50:1[2] |
| Selectivity to silicon oxide | — | >100:1[2] |
| Uniformity | — | <5% across 6-inch wafers[2] |
| Primary RF power | — | up to 3,000 W[2] |
| Secondary RF power | — | up to 3,000 W[2] |
| Substrate power | — | up to 300 W[2] |
| Chuck temperature range | — | -15°C to +40°C[2] |
| Sample size handling | — | 6-inch or smaller samples[2] |
| End point detector | — | Claritas End Point Detector[2] |
| Tool type | — | deep silicon etching system[2] |
| Plasma sources | — | dual plasma sources[2] |
| Gas inlets | — | dual gas inlets[2] |
| Fixed RF matching | — | yes[2] |
| Dual plasma sources | — | yes[2] |
| Dual gas inlets | — | yes[2] |
| Side wall roughness (scallop depth) | — | <6 nm for nanoscale features; range 6–700 nm[2] |
| Wafer handling | — | 6-inch or smaller samples[2] |
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