Comparison ledger
Oxford Instruments 100 ICP Fluorine, PVA TePla GigaBatch, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | GigaBatchPVA TePla |
|---|---|---|
| OEM | Oxford Instruments | PVA TePla |
| Category | Etch | Etch |
| Wafer size | — | 75 mm to 100 mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | PVA TePla GigaBatch |
| Cited variants | — | |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[2] | — |
| Cryo DRIE etch rate | up to 5 µm/min[2] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[2] | 75 mm to 100 mm[3] |
| Plasma type | — | High frequency plasma[3] |
| Plasma frequency | — | 2.45 GHz[3] |
| Plasma power | — | 200 to 600 W[3] |
| Gas | — | O2[3] |
| O2 maximum flow | — | 1000 ml/min[3] |
| Primary vacuum chamber | — | Quartz primary vacuum chamber[3] |
| Primary vacuum chamber dimensions | — | D int. 245 mm x Prof. 380 mm[3] |
| Wafer capacity | — | 25 wafers[3] |
| Wafer size range | — | 75 mm to 100 mm[3] |
| Plasma power range | — | 200 to 600 W[3] |
| Process gas | — | O₂ (max flow 1000 ml/min)[3] |
| Chamber material | — | Quartz[3] |
| Chamber inner diameter | — | 245 mm[3] |
| Chamber depth | — | 380 mm[3] |
| Supported wafer sizes | — | 75 mm to 100 mm[3] |
| Uniformity | — | 20% to 30% depending on process time[3] |
| Positive resist etch rate (high power) | — | 250 nm/min to 1.2 µm/min[3] |
| Positive resist etch rate (low power) | — | 100 nm/min to 500 nm/min[3] |
| Vacuum chamber material | — | Quartz[3] |
| Chamber diameter | — | 245 mm (GIGAbatch 360); 300 mm (GIGAbatch 380M)[1] |
| Wafer batch size | — | Up to 25 wafers per run (75-100 mm)[3] |
| Substrate handling | — | 2" to 8" wafers (GIGAbatch 360/380M)[1] |
| Dimensions (w/h/d) | — | Approx. 795 x 1540 x 710 mm[1] |
| Weight | — | 190 kg[1] |
| Power range | — | 200 to 600 W[3] |
| Chamber dimensions (internal) | — | Diameter 245 mm, Depth 380 mm[3] |
| Process pressure | — | 0.5 to 0.8 mbar[3] |
| Chamber | — | Quartz primary vacuum chamber, D int. 245 mm x Prof. 380 mm[3] |
| Process time (High Power) | — | 1 min to 30 min (PR_Strip_High_xx)[3] |
| Process time (Low Power) | — | 10 sec to 15 min (PR_Strip_Low_xx)[3] |
| Gas flow | — | Maximum 1000 ml/min[3] |
| Holder capacity | — | 25 wafers[3] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →