Comparison ledger
Oxford Instruments 100 ICP Fluorine, Oxford Instruments 80-etch, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | 80-etchOxford Instruments |
|---|---|---|
| OEM | Oxford Instruments | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Oxford Instruments 80-etch |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | — |
| OEM | — | Oxford Instruments[2] |
| Model | — | 80-etch[2] |
| S/N | — | 9M69591A[2] |
| Controller arrangement | — | One controller for both RIE and PECVD[2] |
| PECVD capabilities | — | Amorphous Si, Si3N4, SiONx, SiO2[2] |
| Source gases available | — | SiH4, N2, N2O, NH3, Ar[2] |
| Category | — | Etch[3] |
| Process use | — | Wafer or thin film etching/patterning[2] |
| Serial number | — | 9M69591A[2] |
| Source gases | — | SiH4, N2, N2O, NH3, Ar[2] |
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