Comparison ledger
Lam Research AutoEtch 590 plasma etcher plasma etch semiconductor, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | 6" | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research AutoEtch 590 plasma etcher plasma etch semiconductor | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Model | Lam AutoEtch 590[1] | — |
| Category | Plasma Etch[1] | — |
| Original Equipment Manufacturer | Lam Research[1] | — |
| Condition | AS IS condition(No chiller, no pump, With ENI OEM 12 RF Generator)[1] | — |
| Wafer Size | 4,5,6 inch capability.[1] | — |
| Valid Time | Subject to prior sale[1] | — |
| Lead Time | Ready to go[1] | — |
| Warranty | No.[1] | — |
| Refund | No.[1] | — |
| Inspection | Against appointment[1] | — |
| Wafer size | Lam AutoEtch 590 Wafer Belt Drive System[1] | 4 inch, 6 inch, 8 inch (with clamp change)[4] |
| Wafer Size Capability | 4,5,6 inch[1] | — |
| Wafer Size Configuration | 4 and 6 inch configuration without hardware change[2] | — |
| Wafer Handling | In-line cassette to cassette, fully automated, single wafer[1] | — |
| Chamber Type | Double air-locked, parallel plate[1] | — |
| RF Generator | ENI OEM 12[1] | — |
| Display | CRT monitor display[1] | — |
| Control | Automatic, closed-loop feedback control, double keylocked[1] | — |
| Gas Panel Capacity | Five gases independently, actual capacity six gases (two may share fifth flow controller)[1] | — |
| OEM | Lam Research[1] | — |
| Wafer size capability | 4, 5, 6 inch capability[1] | — |
| Process type | single wafer[1] | — |
| Automation | fully automated[1] | — |
| Wafer handling | cassette-to-cassette[1] | — |
| Chamber structure | double air-locked[1] | — |
| Plasma configuration | parallel plate[1] | — |
| Process parameters | RF power, chamber pressure, gas flow control, electrode spacing, and multi-step process recipes[3] | — |
| Control architecture | automatic, closed-loop feedback control[1] | — |
| Interlock | double keylocked[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[4] |
| Cryo DRIE etch rate | — | up to 5 µm/min[4] |
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