Waferpedia

Comparison ledger

520versus520 IS Wafer

EV Group 520, EV Group 520 IS Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
520EV Group
520 IS WaferEV Group
OEMEV GroupEV Group
CategoryPackaging & BondingPackaging & Bonding
Wafer sizeManual wafer load substrate bonderManual wafer load substrate bonder
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEV Group 520EV Group 520
Cited variants—
Specifications
ConfigurationRefurbished[2]Refurbished[3]
Phase3 Phase[2]—
Wafer sizeManual wafer load substrate bonder[2]Manual wafer load substrate bonder[4]
Wafer Sizeup to 150 mm capable[2]—
Vacuum Chuck6"/150mm diameter chuck[2]—
Max Bond Force7 kN[2]60 kN[4]
Top Side Heater550°C max. in 1°C steps[2]—
Bottom Side Heater550°C max. in 1°C steps[2]—
Temperature uniformity± 1,5 %[2]± 1,5 %[4]
OEMEV Group[2]EV Group[3]
Model520[2]520 IS Wafer[3]
Load typeManual wafer load substrate bonder[2]—
Wafer size (as configured)6 inch[2]—
Wafer size capabilityup to 150 mm capable[2]—
Max bond force (configured system)7 kN[2]—
Top side heater max temperature550°C max. in 1°C steps[2]550°C in 1°C steps[4]
Bottom side heater max temperature550°C max. in 1°C steps[2]550°C in 1°C steps[4]
Power requirements50 / 60 Hz - 120 / 208 V - 3 Phase[2]—
Bonding capability (configured system)Fusion & thermal compression bonding; anodic bonding[2]—
Bond chamberHigh-vacuum capable bond chamber[2]High-vacuum capable bond chamber[4]
Bond tool coverAuto opening of bond tool cover[2]—
Control softwareWindows based control software and operation interface[2]Windows based control software and operation interface[4]
ChillerThermoflex 1400 Chiller (or equivalent)[2]—
PumpingTurbo pump and controller; roughing pump[2]—
System configuration (EVG520 IS)Single or dual chamber wafer bonding system[1]—
Automation (EVG520 IS)Fully automated processing with manual loading and unloading including external cooling station[1]—
Aligner compatibility (EVG520 IS)Compatible with EVG mechanical and optical aligners[1]—
Chambers (EVG520 IS)Single- or double-chamber automated system[1]—
Cooling (EVG520 IS)Integrated cooling station for high throughput; active water cooling top and bottom; integrated cooling optional[1]—
Max contact force (EVG520 IS)10, 20, 60, 100 kN[1]—
Heater size (EVG520 IS)150 mm, 200 mm[1]—
Minimum substrate dimension (EVG520 IS)single chips 100 mm[1]—
Vacuum standard (EVG520 IS)1E-5 mbar[1]—
Vacuum optional (EVG520 IS)1E-6 mbar[1]—
Max temperature (EVG520 IS)Standard: 550 °C; Optional: 650 °C[1]—
Single chips processing (EVG520 IS)Yes[1]—
Loading chamber (EVG520 IS)Manual[1]—
Max bond chambers (EVG520 IS)2[1]—
Anodic bonding power supply (EVG520 IS)Max. voltage: 2 kV; max. current: 50 mA[1]—
Chuck / alignment systems (EVG520 IS)150 mm heater: EVG 610, EVG 620, EVG 6200; 200 mm heater: EVG 6200, SmartView NT[1]—
Top side heater—550°C max. in 1°C steps[4]
Bottom side heater—550°C max. in 1°C steps[4]
Category—Packaging & Bonding[5]
Description—Manual wafer load substrate bonder[5]
Bonding capabilities—Capable of fusion compression bonding, thermal compression bonding, and optional anodic bonding[4]
Included items—Chiller; turbo pump & controller; roughing pump; system computer, monitor, and keyboard[4]
Other stated features—Auto opening of bond tool cover; high-vacuum capable bond chamber; ideal for R&D and pilot production applications[4]
Vintage—2008[4]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]evgroup.comevgroup.com
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]inventory listing
  5. [5]waferpedia.comwaferpedia.com