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Comparison ledger

P 5000 MxP+versusPlasmalab 100 ICP 380

Applied Materials P 5000 MxP+, Oxford Instruments Plasmalab 100 ICP 380, side by side. Every value shown is drawn from the cited encyclopedia entries.

Documented as functional equivalents— Same function class: Etch, null[1]
Side-by-side comparison of selected equipment models
Attribute
P 5000 MxP+Applied Materials
Plasmalab 100 ICP 380Oxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials P 5000 MxP+Oxford Instruments Plasmalab 100
Specifications
Voltage208 V, 125.0 A, 50/60 Hz, 3 Phase[2]415 Vac 3~[1]
Largest Load Ampere Rating125 Amps[2]—
MAximum Ampere Rating90 KVA[2]—
Full Load Current250 Amps[2]—
Interrupt Current10,000 Amps I.C.[2]—
Wafer Set Size8"[2]—
Chamber AMxP+ Etch[2]—
Chamber BMxP+ Etch[2]—
Chamber CMxP+ Etch[2]—
ConfigurationChamber A:[2]—
RF GeneratorOEM 12 B[2]—
Baraton1 Torr[2]—
Slit ValveStandard[2]—
Baratron1 Torr[2]—
MakeApplied Materials[2]—
ModelP 5000 MxP+[2]—
CategoryEtcher[2]—
Wafer sizes8, 6 inch[2]—
Wafer set size6"[3]—
Chamber A RF generatorOEM 12 B[2]—
Chamber B RF generatorOEM 12 B[2]—
Chamber C RF generator12 B[2]—
Electrical requirementLine voltage 200/208 V[2]—
Mainframe typeStandard[2]—
Robot typeMK II[2]—
Load lock cassetteManual 2 Cassette[2]—
Storage elevator15 slots[2]—
Power rackShrink[2]—
Line Frequency50/60 Hz[2]—
Line Voltage200/208 V[2]—
Line Amperage123 Amps[2]—
3rd MonitorPenulator[2]—
OEMApplied Materials[3]—
Frequency—50 Hz[1]
Max rated input current—42 amps[1]
Interrupt current—6KA[1]
Supply voltage—415 Vac 3~[1]
Vintage—2011[1]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]waferpedia.comwaferpedia.com