Waferpedia

Comparison ledger

CNT Mesa Dryversus100 ICP Fluorine

Applied Materials CNT Mesa Dry, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
CNT Mesa DryApplied Materials
100 ICP FluorineOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials CNT Mesa DryOxford Instruments 100 ICP Fluorine
Specifications
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[1]
Cryo DRIE etch rate—up to 5 µm/min[1]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[1]

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Sources (1)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu