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Centura AP Enabler Dielectricversus1512e

Applied Materials Centura AP Enabler Dielectric, Tegal 1512e, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
1512eTegal
OEMApplied MaterialsTegal
CategoryEtchEtch
Wafer sizeDiameter 300+/- 0.05mm(SEMI M28), 775 +/- 25um, Notch—
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials CenturaTegal 1512e
Cited variants
  • Centura AP Enabler E5[1]
—
Specifications
ConfigurationHDD not included[2]—
Wafer SizeDiameter 300+/- 0.05mm(SEMI M28), 775 +/- 25um, Notch[2]—
Online ConnectionGEM / CIM JGJ (Hardware Interface : Ethernet 100Base-Tx)[2]—
Inter Face3 carrier stage (Continuous flow operation) w/ 3 Loadports (Semi compliant[2]—
Interface AHardware related to EDA[2]—
Corrosion Resistant FI & SWLLN/A[2]—
Loader Mod Corrosion PreventN/A[2]—
Standard SWLLStandard SWLL[2]—
Side Storage PodSide Storage Pod (Left/Right)[2]—
OCRKIT, YAT BACKSIDE OCR, 300MM 5.3FI[2]—
Facility PlateN2 Regulator : Supplied by customer in floor, CDA regulator 125 PSI onboard[2]—
Transfer Pressure Monitor10 Torr Manometer and 1SLM N2 APC, kit[2]—
Load Lock Pressure MonitorGAUGE VAC MINI-CONVECTRON W/1-SETPOINT CAJON FTG analog[2]—
Transfer Chamber Blade KitTransfer Chamber Accelerator Blade Kit[2]—
LL ISO-Slit Valve Grp Elast.AP Chemraz 513 Elastomer[2]—
Interface3 carrier stage (Continuous flow operation) w/ 3 Loadports (Semi compliant[2]—
Atmospheric RobotKAWASAKI A3[2]—
Mainframe RobotVXP with Dual blade[2]—
Loadport TypeEnhanced 25 wafer FOUP[2]—
LoadportsLoadport System[2]—
EMO TypeTurn to Release (Front x3, Rear x4) - 3 on FI, 1 on front of FI and one on each side of FI. Rear: 1 for each process chamber.[2]—
System MonitorsMonitor #1 is Flat Panel with Keyboard on stand / Monitor #2 is through the wall flat panel (optional)[2]—
Voltage208V, 50/60Hz[2]—
Vintage2010[2]—
DescriptionDielectric Etch[3]—
Version300mm[4]—
Process Chambers4 process chambers[1]—
Fab Interface TypeCentura Etch 5.3 FAC. Frame 5.3 Fi Rev 002[1]—
RF Gen Top (162MHz Source)3500W RF POWER SUPPLY, 162 MHZ, FIXED FREQUENCY, 208VAC, WATER COOLED (0190-29389)[1]—
RF Gen #1 Bottom (13MHz Bias)RF GENERATOR, 13MHZ 5KW, 300MM, RACK MOUNT (0190-15319)[1]—
RF Gen #2 Bottom (2MHz Bias)RF GEN PLASMA 9KW 2MHZ ENI (0190-29586)[1]—
Endpoint TypeEndpoint type (Eye-D) (0246-00196)[1]—
TMPShimadzu D3403M, 3000 litre TMP[1]—
Dry PumpN(ESR80WN (EBARA); customer Supply)[1]—
Chamber Controller ModuleSBC C400MHZ, 3U CPCI, 256MB RAM[1]—
Gas Line 1C4F6 100 sccm UNIT IFC-125[1]—
Gas Line 2CH2F2 100 sccm UNIT IFC-125[1]—
Gas Line 3C3F8 50 sccm UNIT IFC-125[1]—
Gas Line 4O2_M 300 sccm UNIT-125[1]—
Gas Line 5SO2 200 sccm UNIT IFC-125[1]—
Gas Line 6CF4 200 sccm UNIT IFC-125[1]—
Gas Line 7C4F6_IGI 5 sccm UNIT-125[1]—
Gas Line 8O2_IGI 5 sccm UNIT-125[1]—
Gas Line 9O2_L 50 sccm UNIT-125[1]—
Gas Line 10O2_H 5000 sccm UNIT-125[1]—
Gas Line 11Ar 2000 sccm UNIT-125[1]—
Gas Line 12N2 200 sccm UNIT-125[1]—
Gas Line 13CHF3 200 sccm UNIT-125[1]—
Gas Line 14C4F8 100 sccm UNIT-125[1]—
Source Bottom RingQUARTZ RING SOURCE, E5 (0200-07362)[1]—
Showerhead AssyShowerhead Assy, 4mm SiC Top Electrode Tokai (0041-32335)[1]—
Wafer Pass ThroughNot available[2]—
Tool type—Industrial RIE plasma etcher system[5]
Stated configuration—With modules assembly for CI-4222[5]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]fabsurplus.comfabsurplus.com
  2. [2]inventory listing
  3. [3]fabsurplus.comfabsurplus.com
  4. [4]fabsurplus.comfabsurplus.com
  5. [5]semistarcorp.comsemistarcorp.com