Comparison ledger
Applied Materials 0010-13622 RF Match for, Oxford Instruments 800 Plus, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | 800 PlusOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Oxford Instruments Plasmalab 800 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[2] | 50/60 Hz[3] |
| Model | 0010-13622[2] | — |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[2] | — |
| Feature | High Efficiency HE RF Match-Bias[2] | — |
| RF Frequency | — | 13.56 MHz[1] |
| Low Frequency Range | — | 100–350 kHz[1] |
| Deposition Rate (SiNx, NH3-free process) | — | up to 20 nm/min[1] |
| Typical Cleaning Interval (SiOx) | — | up to 100 μm deposited film[1] |
| Typical Cleaning Interval (SiN) | — | up to 20 μm deposited film[1] |
| Process Gases | — | SiH4, NH3, N2O, CH4, N2, Ar, He, CF4, O2[1] |
| Max Deposition Power (80 Plus) | — | <50 W[1] |
| Process type | — | PECVD (Plasma-Enhanced Chemical Vapor Deposition)[3] |
| Frequency | — | 50/60 Hz[3] |
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