Comparison ledger
Tegal 6550, Tegal 915, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6550Tegal | 915Tegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | 2000 | — |
| Production run | — | 1984– |
| Lifecycle | — | — |
| Lifecycle milestones | 2000 Patent announcement · 2001 Order announced | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 6550 | Tegal 915 |
| Cited variants |
| — |
| Specifications | ||
| Product type | etch reactor / plasma etch system[2] | — |
| Wafer size | 100mm–200mm[1] | 100mm[5] |
| Process target | non-volatile metal and metal oxide films[2] | — |
| Primary application | volume production of magnetic memory components such as MRAM and GMR devices[2] | — |
| Platform | full cluster tool technology[2] | — |
| Process capability | patented rinse-strip-rinse feature / process capability[2] | — |
| Chamber configuration | dual-chamber platform[3] | — |
| Plasma source | patented next-generation dual-frequency plasma source technology[2] | — |
| Plasma source (later material) | Spectra plasma source[3] | — |
| Available option | deposition shield[2] | — |
| Type | plasma etch reactor[2] | Plasma barrel etcher[4] |
| Processes | etching non-volatile metal and metal oxide films[2] | — |
| Plasma source technology | patented next-generation, dual-frequency plasma source technology[2] | — |
| Variant | Spectra plasma source[3] | — |
| Batch capacity | — | Six cassettes of 100 mm wafers (150 pcs.) and four cassettes of 125 mm and 150 mm wafers (100 pcs.)[4] |
| Feed gases | — | Two independent feed gases[4] |
| Reaction chamber temperature control | — | Up to 100 degrees C[4] |
| Production start | — | 1984[5] |
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