Waferpedia

Comparison ledger

6510versus900

Tegal 6510, Tegal 900, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
6510Tegal
900Tegal
OEMTegalTegal
CategoryEtchEtch
Wafer size100mm100mm
Process nodedown to 90nm—
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyTegal 6510Tegal 900
Cited variants—
Specifications
Tool typehigh-density CCP plasma etch tool[2]—
RF powerdual-frequency RF power application[2]—
Plasma confinementmagnetic plasma confinement[2]—
Configurationone or two HRē etch modules on a high-vacuum cluster platform[2]—
Wafer size100mm – 200mm[2]3", 100mm–150mm[1]
Optimization nodeoptimized for device design rules down to 90nm[2]—
Process typeHigh-density CCP plasma etch[2]Single wafer plasma RIE[1]
RF configurationDual-frequency RF power application[2]—
Magnetic confinementYes[2]—
ModulesOne or two HRe etch modules on a high-vacuum cluster platform[2]—
Design rule90nm[2]—
Product line—900 Series plasma etch system[4]
Substrate handling—Handles both round and square substrates[4]
Use case—Defreckling and backside nitride etching[4]
Type—plasma etch system[4]
Applications—defreckling and backside nitride etching[4]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]web.archive.orgweb.archive.org
  3. [3]web.archive.orgweb.archive.org
  4. [4]web.archive.orgweb.archive.org
  5. [5]web.archive.orgweb.archive.org