Comparison ledger
Tegal 1511e, Tegal 903ACS, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1511eTegal | 903ACSTegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | three- to six-inch wafers | 75 mm, 100 mm, 125 mm, and 150 mm diameter wafers; 4-inch square wafers |
| Process node | — | 1 micron |
| Introduced | 1984 | — |
| Production run | 1984– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 1511e | Tegal 903ACS |
| Cited variants | — |
|
| Specifications | ||
| tool type | tri-electrode dual-frequency plasma etch system[2] | — |
| wafer size | three- to six-inch wafers[2] | — |
| first sold | 1984[2] | — |
| system characteristic | first vacuum-loadlocked dual-frequency tri-electrode etch system[2] | — |
| First vacuum-loadlocked dual-frequency tri-electrode etch system | Yes[2] | — |
| Process type | — | Reactive ion etching (RIE)[1] |
| Reactor type | — | Narrow gap diode reactor system[1] |
| Substrates | — | Silicon, gallium-arsenide (Ga-As), indium-phosphide (In-P), and silicon-germanium (Si-Ge)[1] |
| Materials etched | — | Silicon dioxide, silicon nitride, and silicon carbide[1] |
| Wafer sizes | — | 75 mm, 100 mm, 125 mm, and 150 mm diameter wafers; 4-inch square wafers[1] |
| Minimum feature size | — | 1 micron[1] |
| Etch applications | — | Tightly controlled, anisotropic etching of silicon dioxide and silicon nitride insulating layers[1] |
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