Comparison ledger
Oxford Instruments PRS900, YES 1000P, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PRS900Oxford Instruments | 1000PYES |
|---|---|---|
| OEM | Oxford Instruments | YES |
| Category | Wet Processing / Clean | Wet Processing / Clean |
| Wafer size | 6" | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 1998 Acquisition |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments PRS900 | YES 1000P |
| Specifications | ||
| Tool type | plasma stripper; barrel reactor[1] | — |
| Process | dedicated to dry resist stripping[1] | — |
| Etching character | purely chemical and isotropic[1] | — |
| Plasma source | oxygen plasma (RF capacitive or micro-wave)[1] | — |
| Automation | completely computer driven[1] | — |
| Carrier | quartz samples carrier[1] | — |
| Carrier wafer size | 4 or 6 inches[1] | — |
| Batch capacity | up to 25 wafers[1] | — |
| Resistance etch rate used at CMi | 0.035 um/min[1] | — |
| Type | Barrel reactor[1] | — |
| Chamber configuration | Barrel acts as Faraday cage, RF waves do not enter chamber; plasma UV radiations not filtered[1] | — |
| Maximum wafers per batch | 25[1] | — |
| Wafer carrier | Quartz samples carrier (4 or 6 inches)[1] | — |
| Mean resist etch rate | 0.035 µm/min for PR (for 5, 30, or 60 min recipes)[1] | — |
| Computer control | Completely computer driven[1] | — |
| Etch type | Purely chemical, isotropic[1] | — |
| Wafer carrier sizes | 4 or 6 inches[1] | — |
| Mean PR etch rate | 0.035 µm/min[1] | — |
| Standard process recipes | PR Ox5 (5 min), PR Ox30 (30 min), PR Ox60 (60 min)[1] | — |
| Reactor type | Barrel reactor[1] | — |
| Process type | Dry resist stripping; etching processes are purely chemical and isotropic[1] | — |
| Reactor shielding | The barrel acts as a Faraday cage so RF waves do not enter the treatment chamber[1] | — |
| UV behavior | Plasma UV radiations are not filtered and thermally activate the oxidation[1] | — |
| Control | Completely computer driven; the only manual handling is the loading/unloading step of the quartz samples carrier[1] | — |
| Recipe PR Ox5 (5 min) | Mean etch rate 0.035 µm/min; stripping of PR residuals after photolithography[1] | — |
| Recipe PR Ox30 (30 min) | Mean etch rate 0.035 µm/min; stripping of ~1 µm of PR[1] | — |
| Recipe PR Ox60 (60 min) | Mean etch rate 0.035 µm/min; stripping of ~2 µm of PR[1] | — |
| Forbidden materials | Cu, Ag, Au, Cr — equipment must remain microelectronic compatible[1] | — |
| Primary use | dry resist stripping[1] | — |
| Carrier type | quartz samples carrier[1] | — |
| Carrier capacity | up to 25 wafers[1] | — |
| Model | — | 1000P[2] |
| System type | — | Plasma cleaning system[2] |
| Shelf configuration | — | Four 16 x 16 inch shelves[2] |
| Total capacity | — | 1024 square inches[2] |
| Control system | — | PLC driven with plain English real time process readout and diagnostics in the event of system abort[2] |
| Number of shelves | — | 4[2] |
| Shelf size | — | 16 x 16 inches[2] |
| Power | — | 1000 W[3] |
| Configuration | — | Parallel plate[3] |
| Operation modes | — | Active, RIE, Downstream[2] |
| Sample size range | — | From smallest semiconductor chip to large flat panels[2] |
Plan your fab
Building a Wet Processing / Clean process? Get a complete equipment list.
Open the fab equipment planner →