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Plasmalab 100 ICP-RIEversus1512e

Oxford Instruments Plasmalab 100 ICP-RIE, Tegal 1512e, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
Plasmalab 100 ICP-RIEOxford Instruments
1512eTegal
OEMOxford InstrumentsTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments Plasmalab 100Tegal 1512e
Specifications
Process gases usedH2, O2, N2, Ar, CF4, SF6, CHF3, He, CH4, HBr, Cl2 and BCl3[1]—
Cryo Table w/ operating temp-150 to 400C[1]—
Substrate coolingusing liquid nitrogen (LN2)[1]—
ConfigurationRF source 300 W, 13.56 MHz[1]—
Base pressure5E-7 Torr[1]—
Main Chamber Backing PumpAdixen ADP 122P Dry pump[1]—
Main Chamber Turbo PumpAdixen ATH 1300 Turbo[1]—
Load LockAdixen ACP 15G Dry pump[1]—
Tool type—Industrial RIE plasma etcher system[2]
Stated configuration—With modules assembly for CI-4222[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]semistarcorp.comsemistarcorp.com