Comparison ledger
GCA 6300 DSW, Raith EBPG5000, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6300 DSWGCA | EBPG5000Raith |
|---|---|---|
| OEM | GCA | Raith |
| Category | Lithography | Lithography |
| Wafer size | 150mm | 150mm |
| Process node | 5X g-line wafer stepper | sub-10 nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | g-line | — |
| Family | GCA 6300 DSW | Raith EBPG5000 |
| Cited variants | ||
| Specifications | ||
| Tool type | 5X g-line wafer stepper[1] | Ebeam lithography tool/system[3] |
| Exposure wavelength | g-line (436 nm)[1] | — |
| Numerical aperture | 0.30 NA[1] | — |
| Reduction ratio | 5:1[1] | — |
| Variable field size | up to 15 mm square[1] | — |
| Minimum feature size | <0.9 µm[1] | less than 8 nm[4] |
| Wafer accommodation | 3" up to 150 mm; smaller pieces[1] | — |
| Registered alignment | <0.25 µm[1] | — |
| Mask size | 5" x 0.090"-thick masks[1] | up to 6 inch masks[4] |
| Step and repeat exposure system | laser-controlled stage motion[1] | — |
| Lens | Zeiss lens with 0.30 numerical aperture[1] | — |
| Maximum die size | ~15 mm x 15 mm[2] | — |
| Minimum substrate size | ~10 x 10 mm[2] | — |
| Mask plates | 5x5x0.090 inches[2] | — |
| Lens manufacturer | Zeiss (g-line) / Olympus (i-line)[2] | — |
| Lens numerical aperture | 0.30 (g-line)[1] | — |
| Field size | up to 15 mm square (g-line)[1] | variable field size to 1 mm at all kVs[4] |
| Resolution | <0.9 µm (g-line)[1] | — |
| Alignment accuracy | typically <0.25 µm (g-line)[1] | — |
| Registration tolerance (global) | max 0.30 µm (i-line)[2] | — |
| Registration tolerance (local, DFAS) | max 0.15 µm (i-line)[2] | — |
| Wafer size | 3" to 150 mm (g-line)[1] | up to 6 inch wafers[4] |
| Light source | 350 W Hg arc lamp (i-line)[2] | — |
| Intensity at wafer | ~180 mW/cm² (i-line)[2] | — |
| Depth of field | 1.2 µm for 0.7 µm process (i-line)[2] | — |
| Stage system | laser-controlled stage motion (g-line)[1] | — |
| Autofocus | yes (i-line)[2] | — |
| Exposure type | step and repeat[1] | — |
| Reduction | 5:1[1] | — |
| Feature capability | — | smaller than 10 nm features[3] |
| Placement accuracy | — | less than 20 nm[3] |
| Electron gun | — | 100 keV thermal field emission gun[3] |
| Beam type | — | Gaussian beam[3] |
| Pattern generator | — | 50 MHz[3] |
| Alignment | — | direct write mark detection and alignment software[3] |
| Wafer holders | — | 50 mm, 100 mm, and 150 mm wafers[3] |
| Mask holders | — | 5 inch masks and smaller piece parts[3] |
| Writing capability | — | 155 mm[4] |
| Maximum wafer size | — | up to 6 inches[4] |
| Maximum mask size | — | up to 6 inches[4] |
| Acceleration voltage | — | 100 keV[3] |
| Gun type | — | thermal field emission[3] |
| Pattern generator frequency | — | 50 MHz[3] |
| Overlay accuracy | — | <20 nm[3] |
| Wafer sizes supported | — | 50 mm, 100 mm, 150 mm[3] |
| Mask size supported | — | 5 inch[3] |
| Temperature control | — | 21°C ± 0.1°C[3] |
| Electron source type | — | Thermal Field Emission gun (TFE)[3] |
| Beam energy (EPFL EBPG5000ES) | — | 100 keV[3] |
| Pattern generator frequency (EPFL EBPG5000ES) | — | 50 MHz[3] |
| Minimum feature size (EPFL EBPG5000ES) | — | smaller than 10 nm[3] |
| Substrate support (EPFL EBPG5000ES) | — | holders for 50 mm, 100 mm, 150 mm wafers, 5‑inch masks and smaller piece parts[3] |
| Operating temperatures | — | 21 °C ± 0.1 °C (cleanroom environment)[3] |
| Model identifier (UChicago) | — | Raith EBPG5200 E-Beam lithography system (also called EBPG5000 Plus)[4] |
| Wafer size (UChicago model) | — | up to 6″ wafers[4] |
| Mask size (UChicago model) | — | up to 6″ masks[4] |
| Minimum feature size (UChicago model) | — | less than 8 nm[4] |
| Operating voltages (UChicago model) | — | 20, 50, and 100 kV[4] |
| Pattern generator frequency (UChicago model) | — | 50 / 100 MHz[4] |
| Minimum feature (EPFL EBPG5000ES) | — | smaller than 10 nm[3] |
| Electron source (EPFL EBPG5000ES) | — | 100 keV thermal field emission gun[3] |
| Pattern generator (EPFL EBPG5000ES) | — | 50 MHz[3] |
| Substrate holders (EPFL EBPG5000ES) | — | 50 mm, 100 mm, 150 mm wafers; 5-inch masks; smaller piece parts[3] |
| Cleanroom environment | — | custom cleanroom maintained at 21°C ± 0.1°C[3] |
| Minimum feature (PNF EBPG5200) | — | less than 8 nm[4] |
| Writing capability (PNF EBPG5200) | — | 155 mm[4] |
| Substrate sizes (PNF EBPG5200) | — | wafers up to 6 in; masks up to 6 in[4] |
| Acceleration voltages (PNF EBPG5200) | — | 20, 50, and 100 kV[4] |
| Pattern generator (PNF EBPG5200) | — | 50 / 100 MHz[4] |
| Field size (PNF EBPG5200) | — | variable field size to 1 mm at all kVs[4] |
| Electron source (PNF EBPG5200) | — | Thermal Field Emission gun[4] |
| Feature size | — | smaller than 10 nm features[3] |
| Gun | — | 100 keV thermal field emission gun[3] |
| Beam | — | Gaussian beam[3] |
| Holders | — | holders for 50 mm, 100 mm, and 150 mm wafers; 5 inch masks and smaller piece parts[3] |
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