Waferpedia

Comparison ledger

510 Waferversus520 IS Wafer

EV Group 510 Wafer, EV Group 520 IS Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
510 WaferEV Group
520 IS WaferEV Group
OEMEV GroupEV Group
CategoryPackaging & BondingPackaging & Bonding
Wafer sizeManual wafer load substrate bonderManual wafer load substrate bonder
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEV Group 510EV Group 520
Specifications
ConfigurationRefurbished[1]Refurbished[4]
Wafer sizeManual wafer load substrate bonder[1]Manual wafer load substrate bonder[5]
Max Bond Force10 kN[1]60 kN[5]
Top side heater550°C max. in 1°C steps[1]550°C max. in 1°C steps[5]
Bottom side heater550°C max. in 1°C steps[1]550°C max. in 1°C steps[5]
Temperature uniformity± 1,5 % Turbo pump and controller[1]± 1,5 %[5]
ManufacturerEV Group[1]—
Model510 Wafer[1]520 IS Wafer[4]
CategoryPackaging & Bonding[2]Packaging & Bonding[6]
Wafer handlingManual wafer load substrate bonder[2]—
Bonding capabilityFusion and thermal compression bonding[1]—
Bond chamberHigh-vacuum capable bond chamber[2]High-vacuum capable bond chamber[5]
Control softwareWindows based control software and operation interface[1]Windows based control software and operation interface[5]
Turbo pump and controllerIncluded[1]—
Roughing pumpIncluded[1]—
System chillerIncluded[1]—
Load/unload toolIncluded[1]—
System computer, monitor, and keyboardIncluded[1]—
VacuumStandard: 0.1 mbar; optional: 1E-5 mbar[3]—
Max temperature550 °C[3]—
Loading chamberManual[3]—
Max contact force10, 20, 60 kN[3]—
Heater size150 mm, 200 mm[3]—
Single chips processingYes[3]—
Active water coolingFor bottom side[3]—
Power supply for anodic bondingMax voltage 2 kV; max current 50 mA[3]—
OEM—EV Group[4]
Description—Manual wafer load substrate bonder[6]
Bonding capabilities—Capable of fusion compression bonding, thermal compression bonding, and optional anodic bonding[5]
Top side heater max temperature—550°C in 1°C steps[5]
Bottom side heater max temperature—550°C in 1°C steps[5]
Included items—Chiller; turbo pump & controller; roughing pump; system computer, monitor, and keyboard[5]
Other stated features—Auto opening of bond tool cover; high-vacuum capable bond chamber; ideal for R&D and pilot production applications[5]
Vintage—2008[5]

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Sources (6)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]waferpedia.comwaferpedia.com
  3. [3]evgroup.comevgroup.com
  4. [4]inventory listing
  5. [5]inventory listing
  6. [6]waferpedia.comwaferpedia.com