Waferpedia

Comparison ledger

2100 XPversus1 WBS 1 Wafer Substrate

Esec 2100 XP, Logitech 1 WBS 1 Wafer Substrate, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMEsecLogitech
CategoryPackaging & BondingPackaging & Bonding
Wafer size——
Process node——
Introduced——
Production run2008–—
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEsec 2100Logitech 1 WBS 1 Wafer Substrate
Cited variants
  • 2100 xP[1]
  • 2100 xP plus2nd generation of the most flexible 300 mm high speed platform[2]
—
Specifications
Voltage240 V[3]—
Configuration50/60 Hz[3]—
Full Load Power2300 VA[3]—
Bonding methodEpoxy[2]—
Cycle time167 ms[2]—
Bonding accuracy (3σ)Down to 15 µm[2]—
Placement precision5 µm (at 4 placements per second)[4]—
Placement rate4 chips per second[4]—
Wafer size4" to 12" (on 8" or 12" wafer frames)[2]—
Die size range0.25 mm to 20 mm[2]—
Leadframe size (length)90 mm to 300 mm[2]—
Leadframe size (width)9 mm to 84 mm[2]—
Frequency50/60 Hz[3]—
PhaseSingle phase[3]—
Wafer Size—6 inch[5]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]micro-power.com.hkmicro-power.com.hk
  3. [3]inventory listing
  4. [4]oerlikon.comoerlikon.com
  5. [5]Equipment inventory listing