Comparison ledger
CEE 100 Spin, PVA TePla 300, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 SpinCEE | 300PVA TePla |
|---|---|---|
| OEM | CEE | PVA TePla |
| Category | Resist Processing | Resist Processing |
| Wafer size | — | 75 mm to 100 mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 100 | PVA TePla 300 |
| Cited variants | — | |
| Specifications | ||
| Configuration | Volts 115[2] | — |
| Plasma type | — | High frequency plasma[3] |
| Plasma frequency | — | 2.45 GHz[3] |
| Plasma power | — | 200 to 1000 W[3] |
| Gas | — | O2 (max. flow 500 ml/min)[3] |
| Chamber | — | Quartz primary vacuum chamber, Dint. 245 mm x Prof. 380 mm[3] |
| Wafer capacity | — | Quartz holders for 25 wafers[3] |
| Wafer size range | — | 75 mm to 100 mm[3] |
| Micro-electronic compatibility | — | Not micro-electronic compatible[3] |
| Category | — | Plasma etcher (resist strip / surface activation)[3] |
| Positive resist etch rate | — | 350 nm/min[3] |
| Compatibility | — | Not micro-electronic compatible; gold allowed; Si, glass, Pyrex wafers[3] |
| Power Range | — | 200 to 1000 W (or 0-1000 W)[3] |
| Process Gases | — | O2, Ar, N2, CF4[4] |
| Chamber Material | — | Quartz[3] |
| Chamber Dimensions (internal) | — | Diameter 245 mm x Depth 380 mm[3] |
| Wafer Holder Capacity | — | 25 wafers[3] |
| Wafer Size | — | 75 mm to 100 mm[3] |
| Wafer Size (alternate) | — | up to 6 inches[1] |
| Process Pressure | — | 0.6 to 1.5 mbar[1] |
| Restricted Materials | — | Materials that deteriorate in oxygen (Ag, Cu, Cr, Fe, etc.) should not be processed; no Cr or other metals in chamber[3] |
| Microwave frequency | — | 2.45 GHz[3] |
| Power range | — | 200 to 1000 W[3] |
| Batch size | — | Up to 25 wafers[3] |
| Wafer diameter (standard carrier) | — | 75 mm to 100 mm[3] |
| Process gases | — | O2, CF4, Ar, N2[4] |
| Maximum O2 flow | — | 500 ml/min[3] |
| Chamber dimensions (internal diameter x depth) | — | 245 mm x 380 mm[3] |
| Chamber internal dimensions | — | Dint. 245 mm x Prof. 380 mm[3] |
| Gas 1 | — | O2 (max. flow 500 ml/min)[3] |
| Resist strip etch rate | — | 350 nm/min depending on number of wafers[3] |
| Faraday cage | — | Available[3] |
| Process gas | — | O2 (max flow 500 ml/min)[3] |
| Chamber dimensions | — | Quartz primary vacuum chamber, Dint. 245 mm x Prof. 380 mm[3] |
| Process type | — | High-frequency plasma[3] |
| Applications | — | Photoresist stripping; wafer surface cleaning; hydrophilic surface activation of plastics surfaces[3] |
| Carrier capacity | — | Quartz holders for 25 wafers[3] |
| Not micro-electronic compatible | — | This equipment is NOT micro-electronic compatible.[3] |
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