Comparison ledger
CEE 100, Karl Suss MA6/BA6, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100CEE | MA6/BA6Karl Suss |
|---|---|---|
| OEM | CEE | Karl Suss |
| Category | Lithography | Lithography |
| Wafer size | 6" | Samples ranging in size from 10mm to 150mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 100 | Karl Suss MA6/BA6 |
| Cited variants |
| — |
| Specifications | ||
| Tool type | Spray Developer[1] | — |
| Accepts wafer size | up to 6" wafers[2] | — |
| Programmable programs | 10 programs[2] | — |
| Steps per program | up to 10 steps[2] | — |
| Programmable step parameters | Acceleration, Speed, Time[2] | — |
| Associated document | CEE Model 100CB Spinner.doc[2] | — |
| Wafer size | Up to 6 inches[2] | — |
| Programs | 10 programs each with up to 10 steps[2] | — |
| Control parameters | Acceleration, Speed, Time[2] | — |
| OEM | — | Karl Suss[3] |
| Model | — | MA6/BA6[3] |
| Category | — | Frontside/Backside Mask Aligner[4] |
| Application | — | For topside or backside photo alignment and exposure[3] |
| Backside alignment | — | Equipped with backside align capability with automated image capture and computer display optics[4] |
| Exposure wavelengths | — | 350-450nm[4] |
| Lamp house | — | 350W lamp house containing a 350W mercury short-arc lamp[4] |
| Exposure modes | — | Hard contact, soft contact, proximity, and vacuum contact[4] |
| Resolution | — | Line/space resolution of <1.0 microns under optimum conditions[4] |
| Alignment accuracy | — | 0.25 microns under optimum conditions[4] |
| Constant intensity control | — | Constant intensity controller (CIS) regulates lamp power to deliver constant intensity exposures[4] |
| Sample size range | — | 10mm to 150mm[4] |
| Mask size range | — | 4" to 7" sq.[4] |
| Minimum mask thickness | — | .09"[4] |
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