Comparison ledger
ASML 5500 300 C, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 5500 300 CASML | 1505 G 6 ENikon |
|---|---|---|
| OEM | ASML | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML 5500 300 C | Nikon 1505 |
| Cited variants |
| — |
| Specifications | ||
| Software Release | 6.2 and higher[2] | — |
| Actual Software Release | 6.2.3[2] | — |
| Model | 5500 300 C[2] | 1505 G 6 E[3] |
| Wafer size | 8 inch[2] | — |
| Software release | 6.2.3[2] | — |
| Software release minimum | 6.2 and higher[2] | — |
| Productivity | 88 200 mm wafers per hour[1] | — |
| Illuminator | AERIAL Illuminator[1] | — |
| Type | DUV Stepper[1] | — |
| Throughput | 88 wafers per hour (200 mm)[1] | — |
| Illumination | AERIAL illuminator[1] | — |
| Resolution capability | Extendibility beyond 0.25 μm[1] | — |
| Throughput (200 mm wafers) | 88 wafers per hour[1] | — |
| Illuminator type | AERIAL[1] | — |
| Machine type | Stepper (step-and-repeat) lithography system[2] | — |
| Imaging wavelength band | Deep UV (DUV)[1] | — |
| Illumination system | AERIAL Illuminator[1] | — |
| Resolution extendibility | Beyond 0.25 µm[1] | — |
| Configuration | — | 5" reticle[3] |
| Resolution | — | 650 nm[4] |
| Numerical Aperture | — | 0.54[4] |
| Reduction | — | 5x[4] |
| Exposure Field | — | 15 x 15 mm[4] |
| Alignment Accuracy | — | 130 nm[4] |
| Wafer Size | — | 4 inch[3] |
| Light Source | — | g-line[5] |
| Introduction Year | — | 1988[4] |
| NA (Numerical Aperture) | — | 0.54[4] |
| Make | — | Nikon[3] |
| Category | — | Stepper[3] |
| Wafer Sizes | — | 4 inch[3] |
| Exposure type | — | g-line[4] |
| NA | — | 0.54[4] |
| Exposure field | — | 9.3 x 18.8 mm[4] |
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