Comparison ledger
ASML 5500, Tokyo Electron CleanTrack ACT 8, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 5500ASML | CleanTrack ACT 8Tokyo Electron |
|---|---|---|
| OEM | ASML | Tokyo Electron |
| Category | Lithography | Lithography |
| Wafer size | 100mm | 100mm |
| Process node | 248 nm (KrF) DUV | DUV lithography |
| Introduced | — | — |
| Production run | 1991– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML 5500 | Tokyo Electron CleanTrack ACT 8 |
| Cited variants | — | |
| Specifications | ||
| Manufacturer | ASML[1] | — |
| Model | PAS 5500/300[1] | — |
| Description | Deep-UV Stepper Photolithography[1] | — |
| Exposure wavelength | 248 nm (KrF)[1] | — |
| Configured wafer size | 4 in wafers[1] | 100 mm (4") wafers[5] |
| Maximum wafer size | 4 in (100 mm) wafers with SEMI standard wafer flat (not notch)[1] | — |
| Layer-to-layer overlay accuracy | better than 30 nm[1] | — |
| Minimum feature size | ≤150 nm isolated lines; ≤200 nm dense patterns[1] | — |
| Full-field useable exposure area | intersection of a 31 mm diameter circle and a 22 mm x 27 mm rectangle[1] | — |
| Sample size | 100 mm wafers with SEMI std. major flat[1] | — |
| Alignment accuracy | < 50 nm[1] | — |
| Wafer thickness | minimum approximately 200 µm; maximum approximately 1.1 mm[1] | — |
| Maximum dose | ~100 mJ[1] | — |
| Minimum Feature Size (dense) | ≤200 nm[1] | — |
| Minimum Feature Size (isolated lines) | ≤150 nm[1] | — |
| Overlay Accuracy | Better than 30 nm[1] | — |
| Maximum Field Size (usable exposure area) | 22 mm x 27 mm rectangle within a 31 mm diameter circle[1] | — |
| Wafer Size (standard) | 4 inch (100 mm)[1] | — |
| Throughput | Typically minutes per wafer (multiple 4-inch wafers)[1] | — |
| Reduction Ratio | 5x (for some variants, e.g., /200 and /60)[2] | — |
| Numerical Aperture (variable) | 0.48-0.60 (for /200 variant)[2] | — |
| Alignment Accuracy | < 50 nm (for /300 variant)[1] | — |
| Resolution (PAS 5500/300) | ≤150 nm isolated lines, ≤200 nm dense patterns[1] | — |
| Exposure wavelength (PAS 5500/60) | 365 nm[3] | — |
| Reduction ratio (PAS 5500/60) | 5:1[3] | — |
| Wafer size (PAS 5500/300) | 100 mm (4 inch) wafers with SEMI standard flat[1] | — |
| Overlay accuracy (PAS 5500/300) | better than 30 nm[1] | — |
| Resolution (PAS 5500/200) | 350 nm[2] | — |
| Numerical aperture (PAS 5500/200) | 0.48-0.60 variable[2] | — |
| Maximum field size (PAS 5500/200) | 22x22 mm[2] | — |
| Minimum feature size (PAS 5500/60) | 450 nm[3] | — |
| Equipment type | — | Industry-standard wafer coater and developer[5] |
| Lithography mode | — | DUV lithography[5] |
| Exposure interface | — | In-line exposure unit interface[5] |
| Throughput / footprint | — | High throughput in a small footprint[5] |
| Cluster configuration | — | Coater and developer track in-line with an ASML PAS5500/350C stepper[5] |
| Convertible wafer size | — | 150 mm (6") wafers[5] |
| Process materials | — | KrF photoresist and ancillary anti-reflective coatings[5] |
| Track blocks | — | Carrier Station Block (CSB), Process Block (PRB), Interface Block (IFB)[5] |
| Wafer size | — | 100 mm (4 inch) standard, convertible to 150 mm (6 inch) on demand[5] |
| Lithography type | — | DUV (KrF)[5] |
| In-line stepper interface | — | ASML PAS5500/350C[5] |
| Cassette ports | — | Four (two for 100 mm, two for 150 mm)[5] |
| Resist pump lines | — | 4 for photoresist (COT), 2 for BARC (BCT)[5] |
| Developer lines | — | 2 pressure-driven lines[5] |
| BARC materials supported | — | DS-K101 (Brewer Science), DUV-42P[5] |
| Photoresists supported | — | M108Y (JSR Corporation, 0.18 μm), M35G (0.25 μm)[5] |
| Developer used | — | TMA238WA[5] |
| Solvent used | — | Microposit EC Solvent (Dupont)[5] |
| Temperature/humidity control | — | Internal laminar flow with regulated temperature, humidity, and cup temperature/humidity controller (T&H)[5] |
| Water Flow | — | Left to Right[6] |
| Software Version | — | 1.18.003[7] |
| CIM | — | SECS[7] |
| Handler System | — | CRA, PRA (2)[7] |
| Factory Interface | — | SMIF (3)[7] |
| Coater/Developer | — | Wafer coater and developer[5] |
| Configuration | — | In-line with ASML PAS5500/350C stepper forming a DUV lithography cluster[5] |
| Wafer Size (Configured) | — | 100 mm (4")[5] |
| Wafer Size (Conversion Possible) | — | 150 mm (6") - rare and on-demand[5] |
| Main Blocks | — | Carrier Station Block (CSB), Process Block (PRB), Interface Block (IFB)[5] |
| Spinning Units | — | Bottom-layer Coater (BCT), Coater (COT), Developer (DEV)[5] |
| Thermal Plates | — | Low-temperature Hot Plate, High-temperature Hot Plate, High-speed Chill Plate, ADHesion plates, Precision Hot Plates, Transition Station, Transition Chill Plate[5] |
| Interface Buffer | — | 25-slot buffer[5] |
| Photoresist | — | KrF photoresist (M108Y, M35G)[5] |
| BARC | — | DS-K101 and DUV-42P[5] |
| Developer | — | TMA238WA[5] |
| External Modules | — | AC Power Box, Chemical Cabinet, Temperature and Humidity Controller, Thermostatic Water Supply[5] |
| In-line exposure unit | — | ASML PAS5500/350C[5] |
| Wafer capacity (cassette ports) | — | 4[5] |
| BARC types | — | DS-K101 (Brewer Science) and DUV42P[5] |
| Photoresist types | — | M108Y (JSR Corporation) and M35G[5] |
| Exposure unit interface | — | in-line exposure unit interface[5] |
| Chemical filters | — | ULPA chemical filters[5] |
| Ovens | — | high-precision ovens[5] |
| Conversion wafer size | — | 150 mm (6") wafers[5] |
| Photoresist chemistry | — | KrF photoresist[5] |
| Ancillary coating | — | AntiReflective Coatings[5] |
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