Comparison ledger
Applied Materials 9500 Ion, Axcelis 200 PCU, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 9500 IonApplied Materials | 200 PCUAxcelis |
|---|---|---|
| OEM | Applied Materials | Axcelis |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | Wafer orientor | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | 1993 Vintage | 2000 Vintage |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials PI 9500 | Axcelis NV GSD 200 |
| Cited variants |
| |
| Specifications | ||
| Frequency | 60 Hz[4] | 50 Hz[6] |
| Water fittings | Imperial[4] | — |
| Remote distance | ~6m umbilical[4] | — |
| Layout | Thru wall[4] | — |
| Wafer cassette | 25 wafers[4] | — |
| Turbo pumps type | Seiko Seiki[4] | — |
| Mech pumps type | Edwards[4] | — |
| Cryo pumps type | Cryotorr[4] | — |
| Second compressor | 9600 (qty 2)[4] | — |
| Helium line length | 15 m[4] | — |
| Configuration | RGA[4] | — |
| Factory interface | SECS/GEM[4] | — |
| Wafer size | Wafer orientor[4] | — |
| Tilt angle | Variable 0-7[4] | — |
| Wheel type | Standard[4] | — |
| Beamstop | Enlarged Beam Stop[4] | — |
| Plasma Flood System | HDPFS[4] | — |
| Beamline | Standard[4] | — |
| Source type | Bernas[4] | — |
| Front plate | Tungsten[4] | — |
| Line Frequency | 60 Hz[5] | — |
| Utilities | Top[5] | — |
| Wafer Fittings | Imperial[5] | — |
| Remote Distance | 6 m umbilical[5] | — |
| Wafer Size | 6 inch[4] | — |
| Wafer Cassette Capacity | 25 wafers[4] | — |
| Tilt Angle | Variable 0-7 degrees[4] | — |
| Front Plate Material | Tungsten[4] | — |
| Extraction Type | Single bellows[4] | — |
| TEM | No[4] | — |
| Source Chamber Liners | Yes[4] | — |
| MRS Chamber Liners | Yes[4] | — |
| Gas Position 1 | Boron[4] | — |
| Gas Position 2 | N/A[4] | — |
| Gas Position 3 | Available SDS[4] | — |
| Gas Position 4 | Arsine[4] | — |
| TFT Monitor Upgrade | Yes[4] | — |
| Wafer Orientor | Yes[4] | — |
| RGA | Yes[4] | — |
| Turbo Pump Type | Seiko Seiki[4] | — |
| Mech Pump Type | Edwards[4] | — |
| Cryo Pump Type | Cryotorr[4] | — |
| Wafer Size (Source 2) | 6 inch[5] | — |
| Wafer Cassette Capacity (Source 2) | 25 wafers[5] | — |
| Tilt Angle (Source 2) | Variable 0-7 degrees[5] | — |
| Wheel Type (Source 2) | Standard[5] | — |
| Source Type (Source 2) | Bernas[5] | — |
| Front Plate Material (Source 2) | Tungsten[5] | — |
| Extraction Type (Source 2) | Single Bellows[5] | — |
| Source Chamber Liners (Source 2) | Yes[5] | — |
| MRS Chamber Liners (Source 2) | Yes[5] | — |
| Gas Position 1 (Source 2) | N/A[5] | — |
| Gas Position 2 (Source 2) | N/A[5] | — |
| Gas Position 3 (Source 2) | Phosphine[5] | — |
| Gas Position 4 (Source 2) | Arsine[5] | — |
| TFT Monitor Upgrade (Source 2) | Yes[5] | — |
| Wafer Orienter (Source 2) | Yes[5] | — |
| RGA (Source 2) | No[5] | — |
| Line Frequency (Source 2) | 60 Hz[5] | — |
| Remote Distance (Source 2) | 6 m umbilical[5] | — |
| Layout (Source 2) | Through wall[5] | — |
| Turbo Pump Type (Source 2) | Leybold[5] | — |
| Mech Pump Type (Source 2) | Edwards[5] | — |
| Cryo Pump Type (Source 2) | CTI Helix Onboard[5] | — |
| Second Compressor (Source 2) | Yes 9600 (2)[5] | — |
| Helium Line Length (Source 2) | 15 m[5] | — |
| Hydrogen Generator | No[5] | — |
| Vaporizers | No[5] | — |
| Toxic Gas Alarm | No[5] | — |
| VESDA | No[5] | — |
| Auto Cryo Purge | No[5] | — |
| Wafer Size (Source 3) | 200mm[1] | — |
| Description (Source 3) | Ion Implanter (High Current)[1] | — |
| Gas position 4 (Arsine) | Arsine[4] | — |
| Implanter type | High Current[1] | — |
| P/N | — | SC 4840 A[6] |
| Phase | — | 3 Phase[6] |
| Voltage | — | 400 V[6] |
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