Comparison ledger
Applied Materials 0010 47763, Oxford Instruments 80-etch, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | 80-etchOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Oxford Instruments 80-etch |
| Specifications | ||
| Configuration | 2nd Source New[1] | — |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | 80-etch[4] |
| OEM | Applied Materials[1] | Oxford Instruments[4] |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| S/N | — | 9M69591A[4] |
| Controller arrangement | — | One controller for both RIE and PECVD[4] |
| PECVD capabilities | — | Amorphous Si, Si3N4, SiONx, SiO2[4] |
| Source gases available | — | SiH4, N2, N2O, NH3, Ar[4] |
| Category | — | Etch[5] |
| Process use | — | Wafer or thin film etching/patterning[4] |
| Serial number | — | 9M69591A[4] |
| Source gases | — | SiH4, N2, N2O, NH3, Ar[4] |
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