Comparison ledger
Applied Materials 0010-16392 ESC Assembly, Tegal 903ACS, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | 903ACSTegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 75 mm, 100 mm, 125 mm, and 150 mm diameter wafers; 4-inch square wafers |
| Process node | — | 1 micron |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | Tegal 903ACS |
| Cited variants | — |
|
| Specifications | ||
| OEM | Applied Materials[2] | — |
| Model | 0010-16392[2] | — |
| Type | ESC Assembly[2] | — |
| Wafer Size | 300 mm[3] | — |
| Electrode Configuration | Dual[3] | — |
| Process type | — | Reactive ion etching (RIE)[1] |
| Reactor type | — | Narrow gap diode reactor system[1] |
| Substrates | — | Silicon, gallium-arsenide (Ga-As), indium-phosphide (In-P), and silicon-germanium (Si-Ge)[1] |
| Materials etched | — | Silicon dioxide, silicon nitride, and silicon carbide[1] |
| Wafer sizes | — | 75 mm, 100 mm, 125 mm, and 150 mm diameter wafers; 4-inch square wafers[1] |
| Minimum feature size | — | 1 micron[1] |
| Etch applications | — | Tightly controlled, anisotropic etching of silicon dioxide and silicon nitride insulating layers[1] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →