Comparison ledger
Tegal 6510, Tegal 6540, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6510Tegal | 6540Tegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | down to 90nm | down to 90nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 6510 | Tegal 6540 |
| Cited variants | — |
|
| Specifications | ||
| Tool type | high-density CCP plasma etch tool[2] | — |
| RF power | dual-frequency RF power application[2] | dual-frequency RF power application[1] |
| Plasma confinement | magnetic plasma confinement[2] | magnetic plasma confinement[4] |
| Configuration | one or two HRē etch modules on a high-vacuum cluster platform[2] | — |
| Wafer size | 100mm – 200mm[2] | 100mm – 200mm[1] |
| Optimization node | optimized for device design rules down to 90nm[2] | — |
| Process type | High-density CCP plasma etch[2] | — |
| RF configuration | Dual-frequency RF power application[2] | — |
| Magnetic confinement | Yes[2] | — |
| Modules | One or two HRe etch modules on a high-vacuum cluster platform[2] | — |
| Design rule | 90nm[2] | optimized for device design rules down to 90nm[1] |
| Type | — | high-density plasma etch system[4] |
| Reactor | — | HRe reactor / HRe™ reactor[4] |
| Plasma technology | — | dual-frequency RF power technology / dual-frequency RF power application[4] |
| Optimized design rule | — | down to 0.13 micron[4] |
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