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Comparison ledger

ACS200versusMJB4

SUSS MicroTec ACS200, SUSS MicroTec MJB4, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
ACS200SUSS MicroTec
MJB4SUSS MicroTec
OEMSUSS MicroTecSUSS MicroTec
CategoryLithographyLithography
Wafer size100mm100mm
Process node—about 800 nm
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generationi-linei-line
FamilySUSS MicroTec ACS200SUSS MicroTec MJB4
Specifications
Tool typeModular cluster tool[1]—
ProcessCoating and development of i-line photoresists[1]—
Loading/unloading portsTwo loading/unloading ports: one cassette for coating and one cassette for development[1]—
Wafer centeringWafer centering station[1]—
Spin-coating modulesTwo spin-coating modules[1]—
Development moduleOne development module with puddle and spray options[1]—
Hotplates and coolplatesTwo stacks of hotplates (9 in total) and coolplates (3 in total)[1]—
HMDS primingAdditional HMDS-priming module[1]—
Wafer handlingStandard SEMI-wafers of 100 mm and 150 mm diameter[1]—
Supported wafer materialsOpaque wafers (silicon, SOI) and transparent wafers (glass, fused-silica, sapphire)[1]—
Photoresists availableAZ ECI 3007, AZ ECI 3027, AZ 10XT-20, AZ 10XT-60, AZ 15nXT, AZ 40XT[1]—
Wafer diameter supported100mm and 150mm (on request)[1]—
Wafer typesOpaque (silicon, SOI) and transparent (glass, fused-silica, sapphire)[1]—
Number of spin-coating modules2[1]—
Number of development modules1[1]—
Number of hotplates9 (total across two stacks)[1]—
Number of coolplates3[1]—
HMDS priming moduleYes (included)[1]—
Robot modelSankyo SC5000[1]—
Photoresist typei-line[1]—
Voltage400 V[2]—
Phase3 Phase[2]—
Frequency60 Hz[2]—
Thermal modulesTwo stacks of hotplates (9 in total) and coolplates (3 in total), including an additional HMDS-priming module[1]—
Wafer materialOpaque wafers (silicon, SOI) and transparent wafers (glass, fused-silica, sapphire)[1]—
Central robotIndividual processing modules are fed by a central robot[1]—
Robotcentral robot feeding the individual processing modules[1]—
Supported wafer diameters100 mm and 150 mm diameter[1]—
Type—Mask/wafer aligner[3]
Use—Research and development[3]
Wafer diameter—up to 4 inch (100 mm)[3]
Alignment mode—Top side alignment (TSA)[3]
Exposure source—Mercury (Hg) lamp[3]
Wavelengths stated—365 nm, 405 nm, 436 nm[3]
Illumination setup—20 mW/cm2 @ 365 nm (i-line filter installed)[3]
Alignment precision—about 0.5 µm[3]
Exposure modes—flood-exposure, proximity, soft contact, hard contact[3]
Objective magnification—5x, 10x[3]
Special offset objectives—For chip alignment; minimum separation down to 10 mm[3]
Stage travel—X = ±30 mm, Y = ±30 mm, Θ = ±4°[3]
Substrate thickness range—0.1 mm to 4.0 mm[3]
Contact options—Soft, hard, and vacuum contact[4]
Mask thickness—up to 9 mm[4]
Optics option—Universal Optics option for UV 250, UV 350 and UV 400[4]
Alignment optics—SUSS single field microscope[4]
Alignment method—Wedge Error Compensation (WEC)[4]
Alignment modes stated—Top side and infrared alignment[4]
Key applications—LED lithography, MEMS, UV-NIL[4]
Applications—Research and development[3]
Substrate thickness—0.1 mm up to 4.0 mm[3]
Light source—Mercury (Hg) lamp[3]
Spectral lines—365 nm, 405 nm, 436 nm[3]
Illumination configuration—i-line (filter installed), only 365 nm line absorbed[3]
Default illumination intensity—20 mW/cm2 @ 365 nm[3]
Resolution—Minimum about 800 nm with thin PR thickness (< 1 µm)[3]
Alignment modes—Top-side alignment (TSA)[3]
Wedge error compensation—Semi-automatic procedure[3]
Mask holders—Three different holders with vacuum clamping[3]
Chucks—Three different chucks for all sizes[3]
Optional objectives—11x offset objectives: working distance 14.1 mm; minimum separation 10 mm[3]
Objectives magnification—5x, 10x[3]
XY table travel—X = ± 30 mm, Y = ± 30 mm, Θ = ± 4°[3]
Substrate handling—Manual, up to 100 mm diameter[3]
High resolution prints—Down to 0.5 µm[4]
Universal Optics option—UV 250, UV 350, UV 400[4]
Contact modes—Soft, hard, vacuum contact[4]
Alignment options—Top side and infrared alignment[4]
Optics—SUSS single field microscope[4]
Wafer size—up to 4 inch (100 mm) diameter[3]
Exposure wavelength—i-line (365 nm) with filter installed; also lines at 405 nm and 436 nm[3]
Alignment accuracy—about 0.5 µm[3]
XY table travel (X, Y, Θ)—X = ±30 mm, Y = ±30 mm, Θ = ±4°[3]
Objective magnifications—5x, 10x[3]
Offset objectives separation—minimum separation is 10 mm[3]
Maximum mask thickness—up to 9 mm[4]
Illumination power—20 mW/cm² at 365 nm (i-line)[3]
Resolution (minimum)—about 800 nm with thin PR thickness (< 1 µm)[3]
Resolution (printed)—down to 0.5 µm[4]
XY table movement—X = ±30 mm, Y = ±30 mm, Θ = ±4°[3]
Special offset objectives minimum separation—10 mm[3]
Mask thickness support—up to 9 mm[4]
Wafer/substrate thickness range—0.1 mm to 4.0 mm[3]
Substrate size—to 100 mm[4]
Wedge Error Compensation (WEC)—semi-automatic procedure[3]
Machine type—Mask/wafer aligner for research and development[3]
Default exposure intensity—20 mW/cm2 @ 365 nm[3]
XY stage travel—X = ± 30 mm, Y = ± 30 mm, Θ = ± 4°[3]
Small wafer/chip handling—Special offset objectives for alignment of small wafer/chips; minimum separation is 10 mm[3]
Contact and alignment features—Wedge Error Compensation (WEC); splitfield mode; top side and infrared alignment; vacuum contact; universal optics option for UV 250, UV 350, and UV 400[4]
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Sources (4)Every fact above is drawn from these public sources
  1. [1]epfl.chepfl.ch
  2. [2]inventory listing
  3. [3]epfl.chepfl.ch
  4. [4]pnf.uchicago.edupnf.uchicago.edu