Comparison ledger
PVA TePla GigaBatch, Tegal 1511e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | GigaBatchPVA TePla | 1511eTegal |
|---|---|---|
| OEM | PVA TePla | Tegal |
| Category | Etch | Etch |
| Wafer size | 75 mm to 100 mm | three- to six-inch wafers |
| Process node | — | — |
| Introduced | — | 1984 |
| Production run | — | 1984– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | PVA TePla GigaBatch | Tegal 1511e |
| Cited variants | — | |
| Specifications | ||
| Plasma type | High frequency plasma[2] | — |
| Plasma frequency | 2.45 GHz[2] | — |
| Plasma power | 200 to 600 W[2] | — |
| Gas | O2[2] | — |
| O2 maximum flow | 1000 ml/min[2] | — |
| Primary vacuum chamber | Quartz primary vacuum chamber[2] | — |
| Primary vacuum chamber dimensions | D int. 245 mm x Prof. 380 mm[2] | — |
| Wafer capacity | 25 wafers[2] | — |
| Wafer size range | 75 mm to 100 mm[2] | — |
| Plasma power range | 200 to 600 W[2] | — |
| Process gas | O₂ (max flow 1000 ml/min)[2] | — |
| Chamber material | Quartz[2] | — |
| Chamber inner diameter | 245 mm[2] | — |
| Chamber depth | 380 mm[2] | — |
| Supported wafer sizes | 75 mm to 100 mm[2] | — |
| Uniformity | 20% to 30% depending on process time[2] | — |
| Positive resist etch rate (high power) | 250 nm/min to 1.2 µm/min[2] | — |
| Positive resist etch rate (low power) | 100 nm/min to 500 nm/min[2] | — |
| Vacuum chamber material | Quartz[2] | — |
| Chamber diameter | 245 mm (GIGAbatch 360); 300 mm (GIGAbatch 380M)[1] | — |
| Wafer batch size | Up to 25 wafers per run (75-100 mm)[2] | — |
| Substrate handling | 2" to 8" wafers (GIGAbatch 360/380M)[1] | — |
| Dimensions (w/h/d) | Approx. 795 x 1540 x 710 mm[1] | — |
| Weight | 190 kg[1] | — |
| Power range | 200 to 600 W[2] | — |
| Chamber dimensions (internal) | Diameter 245 mm, Depth 380 mm[2] | — |
| Process pressure | 0.5 to 0.8 mbar[2] | — |
| Chamber | Quartz primary vacuum chamber, D int. 245 mm x Prof. 380 mm[2] | — |
| Process time (High Power) | 1 min to 30 min (PR_Strip_High_xx)[2] | — |
| Process time (Low Power) | 10 sec to 15 min (PR_Strip_Low_xx)[2] | — |
| Gas flow | Maximum 1000 ml/min[2] | — |
| Holder capacity | 25 wafers[2] | — |
| Wafer size | 75 mm to 100 mm[2] | — |
| tool type | — | tri-electrode dual-frequency plasma etch system[3] |
| wafer size | — | three- to six-inch wafers[3] |
| first sold | — | 1984[3] |
| system characteristic | — | first vacuum-loadlocked dual-frequency tri-electrode etch system[3] |
| First vacuum-loadlocked dual-frequency tri-electrode etch system | — | Yes[3] |
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