Comparison ledger
Oxford Instruments Plasmalab 180 ICP, Tegal 1512e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Plasmalab 180 ICPOxford Instruments | 1512eTegal |
|---|---|---|
| OEM | Oxford Instruments | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab | Tegal 1512e |
| Specifications | ||
| Configuration | For parts[1] | — |
| Process type | ICP (Inductively Coupled Plasma) high-density etching system configured for reactive ion etching[2] | — |
| System type | Load-locked plasma etching system with ICP source[2] | — |
| Operation | Fully automatic computer-controlled operation[2] | — |
| Maximum substrate size | 150 mm[2] | — |
| Configured substrate size | 100 mm wafers[2] | — |
| Wafer clamping | Mechanical clamping[2] | — |
| Backside cooling | Helium cooling[2] | — |
| Vacuum system | Alcatel turbo pump with controller and roughing pump[2] | — |
| Gas box | Six MFC gas controllers[2] | — |
| Previously used process gases | CHF3/CHF4, C3F8, C4F8, argon, oxygen, hydrogen, chlorine[2] | — |
| Electrical rating | 208V, 3-phase, 50/60 Hz[2] | — |
| Tool type | — | Industrial RIE plasma etcher system[3] |
| Stated configuration | — | With modules assembly for CI-4222[3] |
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