Waferpedia

Comparison ledger

EDC-HL-23versusH6-8

Laurell EDC-HL-23, Laurell H6-8, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EDC-HL-23Laurell
H6-8Laurell
OEMLaurellLaurell
CategorySpin coaterSpin coater
Wafer size150mm200mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation650-series—
FamilyLaurell EDC-HL-23Laurell H6-8
Cited variants
  • EDC-HL-23 B650-series[1]
Specifications
Process controller650-series process controller[1]—
Wafer capacityUp to 150 mm wafers[1]Up to 200mm wafers[2]
Substrate capacityUp to 5 in x 5 in (127 mm x 127 mm) substrates[1]Up to 7" × 7" (178mm × 178mm) substrates[2]
Maximum rotation capability12,000 RPM with vacuum hold-down[1]—
Recommended operating speed3,000 RPM with non-vacuum chucks[1]—
Power95 to 240 VAC, 47/63 Hz, ~300 Watts[1]95 to 240VAC, 47/63HZ, ~300 Watts[2]
Nitrogen/CDA seal purge pressure60–70 PSIG (4–5 bar)[1]—
Vacuum recommendation25–28 inches Hg with 4.5 SCFM at 0 inches Hg[1]—
Maximum rotational speed—12,000 RPM (based on a 100mm silicon wafer)[2]
Series—650-series HL coater system[2]
N2 process/seal purge—60–70 PSIG (4–5 bar) of Nitrogen/ CDA; gas consumption 3 cubic feet per hour (0.085 m3/hour)[2]
Vacuum—25–28 inches (~635–711mm) Hg; flow volume 4.5 SCFM (0.127 cubic meters/minute) at 0 inches Hg[2]
Typical process use—Solvent, Base or Acid-based processing[3]
System type—Spin coater[3]
Standard chuck—Vacuum chuck[3]
Standard adapter—Fragment adapter[3]
Control software—Laurell Touch process control software; Spin 3000 PC software[3]
Vacuum requirement—25 to 28 inches Hg; 4.5 SCFM at 0 inches Hg[3]
Nitrogen/CDA purge pressure—60 to 70 PSIG[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]web.archive.orgweb.archive.org
  3. [3]web.archive.orgweb.archive.org